|
|
PDF AM29BDS640G Data sheet ( Hoja de datos )
| Número de pieza | AM29BDS640G | |
| Descripción | Burst Mode Flash Memory | |
| Fabricantes | AMD | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AM29BDS640G (archivo pdf) en la parte inferior de esta página. Total 65 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
Am29BDS640G
Data Sheet
-XO\
7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG
0LFUR 'HYLFHV DQG )XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ
LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
)XMLWVX
Continuity of Specifications
7KHUH LV QR FKDQJH WR WKLV GDWDVKHHW DV D UHVXOW RI RIIHULQJ WKH GHYLFH DV D 6SDQVLRQ SURGXFW $Q\
FKDQJHV WKDW KDYH EHHQ PDGH DUH WKH UHVXOW RI QRUPDO GDWDVKHHW LPSURYHPHQW DQG DUH QRWHG LQ WKH
GRFXPHQW UHYLVLRQ VXPPDU\ ZKHUH VXSSRUWHG )XWXUH URXWLQH UHYLVLRQV ZLOO RFFXU ZKHQ DSSURSULDWH
DQG FKDQJHV ZLOO EH QRWHG LQ D UHYLVLRQ VXPPDU\
Continuity of Ordering Part Numbers
$0' DQG )XMLWVX FRQWLQXH WR VXSSRUW H[LVWLQJ SDUW QXPEHUV EHJLQQLQJ ZLWK $P DQG 0%0 7R RUGHU
WKHVH SURGXFWV SOHDVH XVH RQO\ WKH 2UGHULQJ 3DUW 1XPEHUV OLVWHG LQ WKLV GRFXPHQW
For More Information
3OHDVH FRQWDFW \RXU ORFDO $0' RU )XMLWVX VDOHV RIILFH IRU DGGLWLRQDO LQIRUPDWLRQ DERXW 6SDQVLRQ
PHPRU\ VROXWLRQV
QiyvphvÃIir
Ã!$("Ã Srvv Ã7 6rqr ÃÃ DrÃ9hr ÃPpir
Ã" Ã!!
1 page  
ADVANCE INFORMATION
Figure 23. Synchronous Program Operation Timings..................... 51
Figure 24. Alternate Synchronous Program Operation Timings ..... 52
Figure 25. Chip/Sector Erase Command Sequence....................... 53
Figure 26. Accelerated Unlock Bypass Programming Timing......... 54
Figure 27. Data# Polling Timings (During Embedded Algorithm) ... 55
Figure 28. Toggle Bit Timings (During Embedded Algorithm)......... 55
Figure 29. Synchronous Data Polling Timings/Toggle Bit Timings . 56
Figure 30. Latency with Boundary Crossing ................................... 57
Figure 31. Latency with Boundary Crossing
into Program/Erase Bank ................................................................ 58
Figure 32. Example of Wait States Insertion (Standard
Handshaking Device) ..................................................................... 59
Figure 33. Back-to-Back Read/Write Cycle Timings ...................... 60
Erase and Programming Performance . . . . . . . 61
FBGA Ball Capacitance . . . . . . . . . . . . . . . . . . . . 61
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 62
FBE080—80-ball Fine-Pitch Ball Grid Array (FBGA)
11 x 12 mm Package .............................................................. 62
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 63
4
Am29BDS640G
October 31, 2002
5 Page 
ADVANCE INFORMATION
ORDERING INFORMATION
The order number (Valid Combination) is formed by the following:
Am29BDS640G
T D 8 WS I
TEMPERATURE RANGE
I = Industrial (–40°C to +85°C)
PACKAGE TYPE
WS = 80-Ball Fine-Pitch Grid Array (FBGA)
0.80 mm pitch, 11 x 12 mm package (FBE080)
VIO AND HANDSHAKING FEATURES
8 = 1.8 V VIO, reduced wait-state handshaking
9 = 1.8 V VIO, standard handshaking
3 = 3 V VIO, reduced wait-state handshaking
4 = 3 V VIO, standard handshaking
CLOCK RATE/ASYNCHRONOUS SPEED
D = 54 MHz/70 ns
C = 40 MHz/90 ns
BOOT CODE SECTOR ARCHITECTURE
T = Top boot sector
B = Bottom boot sector
DEVICE NUMBER/DESCRIPTION
Am29BDS640G
64 Megabit (4 M x 16-Bit) CMOS Flash Memory, Simultaneous Read/Write,
Burst Mode Flash Memory, 1.8 Volt-only Read, Program, and Erase
Valid Combinations
Order Number
Am29BDS640GTD8
Am29BDS640GBD8
Am29BDS640GTD9
Am29BDS640GBD9
Am29BDS640GTC8
Am29BDS640GBC8
WSI
Am29BDS640GTC9
Am29BDS640GBC9
Am29BDS640GTD3
Am29BDS640GBD3
Am29BDS640GTD4
Am29BDS640GBD4
Am29BDS640GTC3
Am29BDS640GBC3
WSI
Am29BDS640GTC4
Am29BDS640GBC4
Package Marking
BS640GTD8V
BS640GBD8V
BS640GTD9V
BS640GBD9V
BS640GTC8V
BS640GBC8V
BS640GTC9V
BS640GBC9V
BS640GTD3V
BS640GBD3V
BS640GTD4V
BS640GBD4V
BS640GTC3V
BS640GBC3V
BS640GTC4V
BS640GBC4V
Burst Frequency
(MHz)
VIO Range
54
1.65–1.95V
40
54
2.7–3.15V
40
Valid Combinations
Valid Combinations list configurations planned to be supported in
volume for this device. Consult the local AMD sales office to con-
firm availability of specific valid combinations and to check on
newly released combinations.
Note:For the Am29BDS640G, the last digit of the speed
grade specifies the VIO range of the device. Speed options
ending in “8” and “9” (e.g., D8, D9) indicate a 1.8 Volt VIO
range. Speed grades ending in “3” and “4” (e.g., D3, D4)
indicate a 3.0 Volt VIO range.
10
Am29BDS640G
October 31, 2002
11 Page | ||
| Páginas | Total 65 Páginas | |
| PDF Descargar | [ Datasheet AM29BDS640G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AM29BDS640G | Burst Mode Flash Memory | AMD |
| AM29BDS640H | (AM29BDS128H / AM29BDS640H) Burst Mode Flash Memory | AMD |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |