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PDF AOD408 Data sheet ( Hoja de datos )
| Número de pieza | AOD408 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD408
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD408 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM applications. Standard Product AOD408 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD408L is a Green Product ordering option.
AOD408 and AOD408L are electrically identical.
Features
VDS (V) = 30V
ID = 18A (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 4.5V)
TO-252
D-PAK
Top View
Drain Connected
to Tab
GD S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
18
18
40
18
40
60
30
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16.7
40
1.9
Max
25
50
2.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AOD408.PDF ] | |
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