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Número de pieza | AOD403 | |
Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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AOD403
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD403 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
AOD403 is Pb-free (meets ROHS & Sony 259
specifications). AOD403L is a Green Product
ordering option. AOD403 and AOD403L are
electrically identical.
TO-252
D-PAK
Features
VDS (V) = -30V
ID = -85A (VGS = -20V)
RDS(ON) < 6mΩ (VGS = -20V)
RDS(ON) < 7.6mΩ (VGS = -10V)
Top View
Drain Connected
to Tab
D
G
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current B,G
TA=25°C G
TA=100°C B
ID
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
S
Maximum
-30
±25
-85
-65
-200
-30
120
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
13
39
0.56
Max
20
50
1.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AOD403.PDF ] |
Número de pieza | Descripción | Fabricantes |
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AOD403 | P-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
AOD404 | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
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