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Número de pieza | PMP4201G | |
Descripción | NPN/NPN matched double transistors | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PMP4201G (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! PMP4201V; PMP4201G;
PMP4201Y
NPN/NPN matched double transistors
Rev. 04 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated
internally.
Table 1. Product overview
Type number Package
NXP
PMP4201V
SOT666
PMP4201G
SOT353
PMP4201Y
SOT363
JEITA
-
SC-88A
SC-88
NPN/NPN hFE1/hFE2 PNP/PNP
0.95 complement complement
PMP4501V
PMP4501G
PMP4501Y
PMP5201V
PMP5201G
PMP5201Y
1.2 Features
I Current gain matching
I Base-emitter voltage matching
I Common emitter configuration for SOT353 types
I Application-optimized pinout
1.3 Applications
I Current mirror
I Differential amplifier
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IC
hFE
collector-emitter voltage
collector current
DC current gain
Conditions
open base
VCE = 5 V;
IC = 2 mA
Min Typ Max Unit
- - 45 V
- - 100 mA
200 290 450
1 page NXP Semiconductors
PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
Table 8. Characteristics …continued
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
VBE base-emitter voltage VCE = 5 V;
IC = 2 mA
VCE = 5 V;
IC = 10 mA
Cc collector capacitance VCB = 10 V;
IE = ie = 0 A;
f = 1 MHz
Ce emitter capacitance VEB = 0.5 V;
IC = ic = 0 A;
f = 1 MHz
fT transition frequency VCE = 5 V;
IC = 10 mA;
f = 100 MHz
NF noise figure
VCE = 5 V;
IC = 0.2 mA;
RS = 2 kΩ;
f = 10 Hz to
15.7 kHz
VCE = 5 V;
IC = 0.2 mA;
RS = 2 kΩ;
f = 1 kHz;
B = 200 Hz
Per device
hFE1/hFE2 hFE matching
VBE1−VBE2 VBE matching
VCE = 5 V;
IC = 2 mA
VCE = 5 V;
IC = 2 mA
Min
[2] 610
[2] -
-
-
100
-
-
[3] 0.98
[4] -
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
Typ
660
-
-
11
250
2.8
3.3
1
-
Max Unit
710 mV
770 mV
1.5 pF
- pF
- MHz
- dB
- dB
-
2 mV
PMP4201V_G_Y_4
Product data sheet
Rev. 04 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
5 of 14
5 Page NXP Semiconductors
PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
2.65
2.35 1.5 0.6 0.5
(4×) (4×)
0.4 (2×)
0.5 0.6
(4×) (2×)
0.6
(4×)
1.8
Fig 17. Reflow soldering footprint SOT363 (SC-88)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot363_fr
1.5
4.5 0.3 2.5
1.5
1.3 1.3
2.45
5.3
Fig 18. Wave soldering footprint SOT363 (SC-88)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot363_fw
PMP4201V_G_Y_4
Product data sheet
Rev. 04 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
11 of 14
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet PMP4201G.PDF ] |
Número de pieza | Descripción | Fabricantes |
PMP4201G | NPN/NPN matched double transistors | NXP Semiconductors |
PMP4201V | NPN/NPN matched double transistors | NXP Semiconductors |
PMP4201Y | NPN/NPN matched double transistors | NXP Semiconductors |
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