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PDF PMP4501G Data sheet ( Hoja de datos )
| Número de pieza | PMP4501G | |
| Descripción | NPN Matched Double Transistor | |
| Fabricantes | NXP Semiconductors | |
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PMP4501V; PMP4501G;
PMP4501Y
NPN/NPN matched double transistors
Rev. 03 — 19 September 2006
Product data sheet
1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated
internally.
Table 1. Product overview
Type number Package
Philips
PMP4501V
SOT666
PMP4501G
SOT353
PMP4501Y
SOT363
JEITA
-
SC-88A
SC-88
NPN/NPN hFE1/hFE2 PNP/PNP
0.98 complement complement
PMP4201V
PMP4201G
PMP4201Y
PMP5501V
PMP5501G
PMP5501Y
1.2 Features
I Current gain matching
I Base-emitter voltage matching
I Common emitter configuration for SOT353 types
I Application-optimized pinout
1.3 Applications
I Current mirror
I Differential amplifier
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IC
hFE
collector-emitter voltage
collector current
DC current gain
Conditions
open base
VCE = 5 V;
IC = 2 mA
Min Typ Max Unit
- - 45 V
- - 100 mA
200 290 450
DataSheet4 U .com
1 page  
Philips Semiconductors
PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors
Table 8. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VBE base-emitter voltage VCE = 5 V;
IC = 2 mA
VCE = 5 V;
IC = 10 mA
Cc collector capacitance VCB = 10 V;
IE = ie = 0 A;
f = 1 MHz
Ce emitter capacitance VEB = 0.5 V;
IC = ic = 0 A;
f = 1 MHz
fT transition frequency VCE = 5 V;
IC = 10 mA;
f = 100 MHz
NF noise figure
VCE = 5 V;
IC = 0.2 mA;
RS = 2 kΩ;
f = 10 Hz to
15.7 kHz
VCE = 5 V;
IC = 0.2 mA;
RS = 2 kΩ;
f = 1 kHz;
B = 200 Hz
Per device
hFE1/hFE2 hFE matching
VBE1−VBE2 VBE matching
VCE = 5 V;
IC = 2 mA
VCE = 5 V;
IC = 2 mA
Min
[2] 610
[2] -
-
-
100
-
-
[3] 0.95
[4] -
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
Typ
660
-
-
11
250
2.8
3.3
1
-
Max Unit
710 mV
770 mV
1.5 pF
- pF
- MHz
- dB
- dB
-
2 mV
PMP4501V_G_Y_3
Product data sheet
Rev. 03 — 19 September 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5 of 14
5 Page 
Philips Semiconductors
PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors
2.65
0.60
(2×)
solder lands
2.35
solder paste
solder resist
0.50
(4×)
occupied area
Dimensions in mm
0.50
(4×)
1.20
2.40
Fig 17. Reflow soldering footprint SOT363 (SC-88)
5.25
0.40
(2×)
0.90
2.10
sot363
4.50
0.30 1.00 4.00
solder lands
solder resist
occupied area
Dimensions in mm
1.15
3.75
transport direction during soldering
Fig 18. Wave soldering footprint SOT363 (SC-88)
sot363
PMP4501V_G_Y_3
Product data sheet
Rev. 03 — 19 September 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PMP4501G.PDF ] | |
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