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What is MRF6V2150N?

This electronic component, produced by the manufacturer "Motorola Semiconductor", performs the same function as "RF Power Field Effect Transistor".


MRF6V2150N Datasheet PDF - Motorola Semiconductor

Part Number MRF6V2150N
Description RF Power Field Effect Transistor
Manufacturers Motorola Semiconductor 
Logo Motorola Semiconductor Logo 


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Freescale Semiconductor
Technical Data
Document Number: Order from RF Marketing
Rev. 6, 10/2006
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for wideband large - signal output and driver applications
with frequencies up to 450 MHz. Devices are unmatched and are suitable for
use in industrial, medical and scientific applications.
Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain — 25.5 dB
Drain Efficiency — 69%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 Watts
Output Power
Integrated ESD Protection
Excellent Thermal Stability
Facilitates Manual Gain Control, ALC and Modulation Techniques
225°C Capable Plastic Package
RoHS Compliant
MRF6V2150N
MRF6V2150NB
PREPRODUCTION
10 - 450 MHz, 150 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V2300N
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V2300NB
PARTS ARE SINGLE - ENDED
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TJ
- 0.5 +110
- 0.5 + 12
- 65 to +150
225
Vdc
Vdc
°C
°C
Characteristic
Symbol
Value (3)
Unit
Thermal Resistance, Junction to Case
Case Temperature TBD°C, TBD W CW
Case Temperature TBD°C, TBD W CW
RθJC
TBD
TBD
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. (Calculator available when part is in production.)
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
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MRF6V2150N MRF6V2150NB
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RF Device Data
Freescale Semiconductor
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MRF6V2150N MRF6V2150NB
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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MRF6V2150N electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
MRF6V2150NThe function is RF Power Field Effect Transistor. Motorola SemiconductorMotorola Semiconductor
MRF6V2150NBThe function is RF Power Field Effect Transistor. Motorola SemiconductorMotorola Semiconductor
MRF6V2150NBR1The function is RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Freescale SemiconductorFreescale Semiconductor

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