DataSheet.es    


Datasheet K4S561632C Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1K4S561632C256Mbit SDRAM

K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 DataSheet 4 U .com K4S561632C Revi
Samsung
Samsung		data


K4S Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1K4S160822D2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

K4S160822D CMOS SDRAM 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL Revision 1.0 October 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 (Oct. 1999) K4S160822D Revision History Revision 1.0 (October 1999) CMOS SDRAM -2- R
Samsung semiconductor
Samsung semiconductor		data
2K4S161622D512K x 16Bit x 2 Banks Synchronous DRAM

K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) Al
Samsung semiconductor
Samsung semiconductor		data
3K4S161622E1M x 16 SDRAM

K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V po
Samsung semiconductor
Samsung semiconductor		data
4K4S161622E-TC101M x 16 SDRAM

K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V po
Samsung semiconductor
Samsung semiconductor		data
5K4S161622E-TC551M x 16 SDRAM

K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V po
Samsung semiconductor
Samsung semiconductor		data
6K4S161622E-TC601M x 16 SDRAM

K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V po
Samsung semiconductor
Samsung semiconductor		data
7K4S161622E-TC701M x 16 SDRAM

K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V po
Samsung semiconductor
Samsung semiconductor		data



Esta página es del resultado de búsqueda del K4S561632C. Si pulsa el resultado de búsqueda de K4S561632C se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap