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IRFZ24L Datasheet PDF - International Rectifier

Part Number IRFZ24L
Description HEXFET Power MOSFET
Manufacturers International Rectifier 
Logo International Rectifier Logo 

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Total ( 10 pages )



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l Advanced Process Technology
l Surface Mount (IRFZ24S)
l Low-profile through-hole (IRFZ24L)
l 175°C Operating Temperature
l Fast Switching
G
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ24L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
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PD - 9.891A
IRFZ24S/L
HEXFET® Power MOSFET
D VDSS = 60V
RDS(on) = 0.10
ID = 17A
S
D 2 Pak
T O -262
Max.
17
12
68
3.7
60
0.40
± 20
100
4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
V/ns
°C
°C
Typ.
–––
–––
Max.
2.5
40
Units
°C/W
8/25/97

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IRFZ24L equivalent
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IRFZ24S/L
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