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PDF NTP30N20 Data sheet ( Hoja de datos )
| Número de pieza | NTP30N20 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTP30N20
Preferred Device
Power MOSFET
30 Amps, 200 Volts
N−Channel Enhancement−Mode TO−220
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified
• IDSS and RDS(on) Specified at Elevated Temperature
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Source Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA 25°C
− Continuous @ TA 100°C
− Pulsed (Note 1)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
200
200
"30
"40
30
22
90
214
1.43
Vdc
Vdc
Vdc
Adc
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
Single Drain−to−Source Avalanche Energy −
Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL(pk) = 20 A, L = 3.0 mH, RG = 25 Ω)
EAS
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
RθJC
RθJA
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
1. Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%.
mJ
450
°C/W
0.7
62.5
260 °C
http://onsemi.com
30 AMPERES
200 VOLTS
68 mΩ @ VGS = 10 V (Typ)
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
NTP30N20
LLYWW
1
Gate
3
Source
2
Drain
NTP30N20 = Device Code
LL = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP30N20
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 4
DataSheet4 U .com
1
Publication Order Number:
NTP30N20/D
1 page  
www.DataSheet4U.com
NTP30N20
12
10 VDS
8
6 Q1
4
2
QT
180 1000
VDD = 160 V
150 ID = 30 A
VGS = 10 V
120 100
tf
Q2
VGS 90
tr
td(off)
ID = 30 A
TJ = 25°C
60
30
10
td(on)
00
0 10 20 30 40 50 60 70
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1
1 10
RG, GATE RESISTANCE (Ω)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
30
VGS = 0 V
25 TJ = 25°C
20
15
10
5
0
0.5 0.6
0.7 0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1
Figure 10. Diode Forward Voltage versus Current
100
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal
Resistance−General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 µs. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RθJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
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