|
|
PDF 2SD2693A Data sheet ( Hoja de datos )
| Número de pieza | 2SD2693A | |
| Descripción | Power Transistors Silicon NPN triple diffusion planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SD2693A (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
Power Transistors
2SD2693A
Silicon NPN triple diffusion planar type
For power amplification
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
■ Features
• Wide safe oeration area
• Satisfactory linearity of forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
80 V
80 V
6V
3A
5A
25 W
2.0
Da1t5a0Sheet4°UC .com
−55 to +150 °C
Note) *: Non-repetitive peak collector current
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
DataShee
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Collector-emitter voltage (Base open) *1 VCEO
Collector-base cutoff current (Emitter open) ICBO
Collector-emitter cutoff current (Base open) ICEO
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1
IEBO
hFE1 *2
Collector-emitter saturation voltage *1
hFE2
VCE(sat)
Transition frequency
fT
Turn-on time
ton
Storage time
tstg
Fall time
tf
Conditions
IC = 30 mA, IB = 0
VCB = 80 V, IE = 0
VCE = 80 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 0.375 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz
IC = 1 A, Resistance loaded
IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
Min Typ Max Unit
80 V
100 µA
100 µA
1 mA
70 250
10
0.8 V
30 MHz
0.1 µs
2.3 µs
0.3 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
P
DataSheet4U.com hFE1
70 to 150
120 to 250
Publication date: July 2004
SJD00322AED
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD2693A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SD2693 | Power Transistors | Panasonic Semiconductor |
| 2SD2693A | Power Transistors Silicon NPN triple diffusion planar type | Panasonic Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |