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What is DIM100WHS17-A000?

This electronic component, produced by the manufacturer "Dynex Semiconductor", performs the same function as "IGBT Power Module".


DIM100WHS17-A000 Datasheet PDF - Dynex Semiconductor

Part Number DIM100WHS17-A000
Description IGBT Power Module
Manufacturers Dynex Semiconductor 
Logo Dynex Semiconductor Logo 


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DIM100WHS17-A000
DIM100WHS17-A000
Half Bridge IGBT Module
PDS5715-1.1 Febuary 2004
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Base Plate
APPLICATIONS
I Inverters
I Motor Controllers
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
100A
IC(PK)
(max)
200A
*(measured at the power busbars and not the auxiliary terminals)
7(E2)
6(G2)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
1(E1C2)
2(E2)
The DIM100WHS17-A000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
DataSheet4U.com
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Half bridge circuit diagram
3(C1)
4(G1)
5(E1)
DataShee
ORDERING INFORMATION
Order As:
DIM100WHS17-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
DataSheewt4wU.wco.mdynexsemi.com
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DIM100WHS17-A000 equivalent
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DIM100WHS17-A000
TYPICAL CHARACTERISTICS
200
Common emitter.
Tcase = 25˚C
175 Vce is measured at power busbars
and not the auxiliary terminals
150
200
Common emitter.
Tcase = 125˚C
175 Vce is measured at power busbars
and not the auxiliary terminals
150
125 125
100 100
et4U.com
75 75
50
25
0
0 0.5 1
1.5 2
2.5 3
VGE = 20V
15V
12V
10V
3.5 4 4.5 5
Collector-emitter voltage, Vce - (V)
50
VGE = 20V
25 15V
12V
10V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics DataSheet4U.com Fig. 4 Typical output characteristics
40
Conditions:
Tc = 125˚C,
35 Rg = 10 ohms,
Vcc = 900V
30
70
Conditions:
Tc = 125˚C,
IC = 100A,
60 Vcc = 900V
50
DataShee
25
20
15
10
5 Eon
Eoff
Erec
0
0 10 20 30 40 50 60 70 80 90 100
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
40
30
20
10
Eon
Eoff
Erec
0
8 10 12 14 16 18 20
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
DataSheewt4wU.wco.mdynexsemi.com
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DataSheet4 U .com


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Featured Datasheets

Part NumberDescriptionMFRS
DIM100WHS17-A000The function is IGBT Power Module. Dynex SemiconductorDynex Semiconductor

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