DIM100WHS12-E000 Datasheet PDF - Dynex Semiconductor
Part Number | DIM100WHS12-E000 | |
Description | IGBT Power Module | |
Manufacturers | Dynex Semiconductor | |
Logo | ||
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DIM100WHS12-E000
DIM100WHS12-E000
Half Bridge IGBT Module
FEATURES
I Trench Gate Field Stop Technology
I Low Conduction Losses
I Low Switching Losses
I 10µs Short Circuit Withstand
PDS5710-1.1 January 2004
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1200V
1.7V
100A
200A
APPLICATIONS
I Motor Drives
I Wind Turbines
I UPS Systems
7(E2)
6(G2)
1(E1C2)
2(E2)
3(C1)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM100WHS12-E000 is a half bridge 1200V, DnacthaaSnhnelet4U.com
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
4(G1)
5(E1)
Fig. 1 Half bridge circuit diagram
DataShee
ORDERING INFORMATION
Order As:
DIM100WHS12-E000
Note: When ordering, please use the complete part number.
Outline type code: W
(See package details for further information)
Fig. 2 Module Outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM100WHS12-E000
TYPICAL CHARACTERISTICS
200
Common emitter
Tcase = 25°C
150
200
Common emitter
Tcase = 125°C
150
100 100
et4U.com
50 50
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector voltage, Vce - (V)
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector voltage, Vce - (V)
Fig. 3 Typical output characteristics DataSheet4U.com Fig. 4 Typical output characteristics
DataShee
35
Conditions:
Tcase = 125ºC
Rg(on) = 20 ohms
30 Rg(off) = 7.5 ohms
Vcc = 600V
50
Conditions:
Tcase = 125ºC
45 IC = 100A
Vcc = 600V
40
Eon
Eoff
Erec
25 35
30
20
Eon 25
15 Eoff 20
Erec
10 15
10
5
5
0
0 50 100 150 200
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
0
0 10 20 30 40 50 60 70 80
Gate resistance, Rg - (ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for DIM100WHS12-E000 electronic component. |
Information | Total 8 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ DIM100WHS12-E000.PDF Datasheet ] |
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Featured Datasheets
Part Number | Description | MFRS |
DIM100WHS12-E000 | The function is IGBT Power Module. Dynex Semiconductor | |
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