STK800 Datasheet PDF - ST Microelectronics
Part Number | STK800 | |
Description | N-channel Power MOSFET | |
Manufacturers | ST Microelectronics | |
Logo | ||
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STK800
N-channel 30V - 0.006Ω - 20A - PolarPAK®
STripFET™ Power MOSFET
General features
Type VDSS RDS(on)
STK800 30V <0.0078Ω
RDS(on)*Qg
80.4nC*mΩ
PTOT
5.2W
■ Ultra low top and bottom junction to case
thermal resistance
■ Very low capacitances
■ 100% Rg tested
■ Fully incapsulated die
■ In compliance with the 2002/95/EC european
directive
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, moreover the double sides
cooling package with ultra low junction to case
thermal resistance allows to handle higher levels
of current.
Applications
■ Switching application
PolarPAK®
Internal schematic diagram
Bottom View
Top View
Order codes
Part number
STK800
Marking
K800
Package
PolarPAK®
Packaging
Tape & reel
March 2006
Rev 3
1/12
www.st.com
12
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STK800
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test condictions
VDD= 15V, ID= 10A,
RG=4.7Ω, VGS=4.5V
(see Figure 15)
VDD=15V, ID= 10A,
RG=4.7Ω, VGS=4.5V
(see Figure 15)
Min. Typ. Max. Unit
15 ns
50 ns
45 ns
15 ns
Table 6. Source drain diode
Symbol
Parameter
Test condictions
ISD
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
VSD(2) Forward on Voltage
ISD= 20A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 20A, di/dt = 100A/µs,
VDD=20V, Tj=150°C
(see Figure 15)
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
20 A
80 A
1.2 V
32
28.8
1.8
ns
nC
A
5/12
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Information | Total 12 Pages | |
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