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PDF MPSH10 Data sheet ( Hoja de datos )
| Número de pieza | MPSH10 | |
| Descripción | NPN Silicon Planar Epitaxial Transistor | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MPSH10 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
IS/ISO 9002
Lic# QSC/L-000019.3
MPSH10
TO-92
Plastic Package
BEC
VHF/UHF Transistor
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
PD
PD
Tj, Tstg
THERMAL RESISTANCE
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Junction to Ambient in free air
Rth (j-a)
Junction to case
Rth (j-c)
VALUE
25
30
3.0
350
2.8
1.0
8.0
- 55 to +150
357
125
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Base Voltage
VCBO
IC=100µA, IE=0
Emitter Base Voltage
VEBO
IE=10µA, IC=0
Collector Cut off Current
ICBO
VCB=25V, IE = 0
Emitter Cut off Current
IEBO
VEB=2V, IC = 0
DC Current Gain
hFE IC=4mA,VCE=10V
Collector Emitter Saturation Voltage
VCE(sat)
IC=4mA, IB=0.4mA
Base Emitter On Voltage
VBE(on)
IC=4mA,VCE=10V
MIN
25
30
3.0
60
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transition Frequency
Collector Base Capacitance
Common Base feedback Capacitance
Collector Base Time Constant
SYMBOL
fT
Ccb
Crb
rb' CC
TEST CONDITION
IC=4mA, VCE=10V, f=100MHz
VCB=10V, IE=0, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=4mA,VCB=10V, f=31.8MHz
MIN
650
0.35
UNITS
V
V
V
mW
mW/ºC
W
mW/ºC
ºC
DataShee
ºC/W
ºC/W
MAX
100
100
UNITS
V
V
V
nA
nA
0.50 V
0.95 V
MAX
0.70
0.65
9.00
UNITS
MHz
pF
pF
ps
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Continental Device India Limited
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Data Sheet
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Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MPSH10.PDF ] | |
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