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What is B772P?

This electronic component, produced by the manufacturer "NEC", performs the same function as "-30V, -3A, PNP Transistor, 2SB772".


B772P Datasheet PDF - NEC

Part Number B772P
Description -30V, -3A, PNP Transistor, 2SB772
Manufacturers NEC 
Logo NEC Logo 

The B772P is PNP silicon transistor suited for the output stage of 3W audio amplifier, voltage regulator, DC-DC converter and relay driver.

Features:

Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required.

1. High voltage and current capacity

2. Low saturation voltage for efficient switching

3. Complementary NPN transistor available for use in push-pull circuit

There is a preview and B772P download ( pdf file ) link at the bottom of this page.





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DATA SHEET
PNP SILICON POWER TRANSISTOR
2SB772
PNP SILICON POWER TRANSISTOR
DESCRIPTION
The 2SB772 is PNP silicon transistor suited for the output stage of 3
W audio amplifier, voltage regulator, DC-DC converter and relay
driver.
FEATURES
Low saturation voltage
VCE(sat) ≤ −0.5 V (IC = 2 A, IB = 0.2 A)
Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
Less cramping space required due to small and thin package and
reducing the trouble for attachment to a radiator.
No insulator bushing required.
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2 ±0.2
2.8 MAX.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
Junction Temperature
Maximum Power Dissipation
55 to +150°C
150°C Maximum
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Maximum Voltages and Currents (TA = 25°C)
VCBO
Collector to Base Voltage
VCEO
Collector to Emitter Voltage
VEBO
Emitter to Base Voltage
IC(DC)
Collector Current (DC)
IC(pulse)Note Collector Current (pulse)
Note Pulse Test PW 350 µs, Duty Cycle 2%
1.0 W
10 W
40 V
30 V
5.0 V
3.0 A
7.0 A
12 TYP.
0.55
+0.08
–0.05
0.8
+0.08
–0.05
2.3 TYP.
2.3 TYP.
1.2 TYP.
1: Emitter
2: Collector: connected to mounting plane
3: Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
DC Current Gain
hFE1
VCE = 2.0 V, IC = 20 mANote
DC Current Gain
hFE2
VCE = 2.0 V, IC = 1.0 mANote
Gain Bandwidth Product
fT VCE = 5.0 V, IC = 0.1 A
Output Capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Collector Cutoff Current
ICBO VCB = 30 V, IE = 0 A
Emitter Cutoff Current
IEBO VEB = 3.0 V, IC = 0 A
Collector Saturation Voltage
VCE(sat)
IC = 2.0 A, IB = 0.2 ANote
Base Saturation Voltage
VBE(sat)
IC = 2.0 A, IB = 0.2 ANote
Note Pulse Test: PW 350 µs, Duty Cycle 2%
MIN.
30
60
TYP.
220
160
80
55
0.3
1.0
MAX.
400
1.0
1.0
0.5
2.0
UNIT
MHz
pF
µA
µA
V
V
CLASSIFICATION OF hFE
Rank
Range
R
60 to 120
Q
100 to 200
P
160 to 320
Remark Test Conditions: VCE = 2.0 V, IC = 1.0 A
E
200 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17118EJ2V0DS00 (2nd edition)
(Previous No. TC-3569)
Date Published March 2004 N CP(K)
Printed in Japan
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c 2004
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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for B772P electronic component.


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1. 3A, PNP Transistor - Fairchild

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