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What is GE28F640L18?

This electronic component, produced by the manufacturer "Intel Corporation", performs the same function as "Wireless Flash Memory".


GE28F640L18 Datasheet PDF - Intel Corporation

Part Number GE28F640L18
Description Wireless Flash Memory
Manufacturers Intel Corporation 
Logo Intel Corporation Logo 


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Total 70 Pages



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Intel StrataFlash® Wireless Memory
(L18)
28F640L18, 28F128L18, 28F256L18
Datasheet
Product Features
High performance Read-While-Write/Erase
Security
— 85 ns initial access
— OTP space:
— 54 MHz with zero wait state, 14 ns clock-to-
data output synchronous-burst mode
— 25 ns asynchronous-page mode
— 4-, 8-, 16-, and continuous-word burst mode
— Burst suspend
— Programmable WAIT configuration
— Buffered Enhanced Factory Programming
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
• Additional 2048 user-programmable OTP bits
— Absolute write protection: VPP = GND
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
(BEFP) at 5 µs/byte (Typ)
Software
— 1.8 V low-power buffered programming at
— 20 µs (Typ) program suspend
7 µs/byte (Typ)
— 20 µs (Typ) erase suspend
Architecture
— Intel® Flash Data Integrator optimized
— Asymmetrically-blocked architecture
— Basic Command Set (BCS) and Extended
— Multiple 8-Mbit partitions: 64-Mbit and 128-
Command Set (ECS) compatible
Mbit devices
— Common Flash Interface (CFI) capable
— Multiple 16-Mbit partitions: 256-Mbit devices Quality and Reliability
www.DataSheet4U.com— Four 16-Kword parameter blocks: top or
bottom configurations
— 64-Kword main blocks
— Expanded temperature: –25° C to +85° C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (0.13 µm)
— Dual-operation: Read-While-Write (RWW) or
Read-While-Erase (RWE)
— Status Register for partition and device status
Density and Packaging
— 64-, 128-, and 256-Mbit density in VF BGA
packages
Power
— VCC (core) = 1.7 V - 2.0 V
— VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V
— 128/0 and 256/0 density in SCSP
— 16-bit wide data bus
— Standby current: 30 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 15 mA (Typ)
at 54 MHz
— Automatic Power Savings mode
The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel
StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides
high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low-
voltage, multi-level cell (MLC) technology.
The multiple-partition architecture enables background programming or erasing to occur in one
partition while code execution or data reads take place in another partition. This dual-operation
architecture also allows a system to interleave code operations while program and erase
operations take place in the background. The 8-Mbit or 16-Mbit partitions allow system
designers to choose the size of the code and data segments. The L18 wireless memory device is
manufactured using Intel 0.13 µm ETOX™ VIII process technology. It is available in industry-
standard chip scale packaging.
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Order Number: 251902, Revision: 010
August 2005
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GE28F640L18 equivalent
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Intel StrataFlash® Wireless Memory (L18)
14.0 Dual-Operation Considerations....................................................................................... 71
14.1 Memory Partitioning............................................................................................................71
14.2 Read-While-Write Command Sequences...........................................................................71
14.2.1 Simultaneous Operation Details ............................................................................ 72
14.2.2 Synchronous and Asynchronous RWW Characteristics and Waveforms.............. 72
14.2.2.1 Write operation to asynchronous read transition ...................................72
14.2.2.2 Write to synchronous read operation transition ..................................... 73
14.2.2.3 Write Operation with Clock Active..........................................................73
14.2.3 Read Operation During Buffered Programming..................................................... 73
14.3 Simultaneous Operation Restrictions ................................................................................. 74
15.0 Special Read States.............................................................................................................. 75
15.1 Read Status Register.......................................................................................................... 75
15.1.1 Clear Status Register............................................................................................. 76
15.2 Read Device Identifier ........................................................................................................ 76
15.3 CFI Query ........................................................................................................................... 77
Appendix A Write State Machine (WSM) ...........................................................................78
Appendix B Flowcharts ............................................................................................................85
Appendix C Common Flash Interface ................................................................................ 93
Appendix D Additional Information...................................................................................103
Appendix E Ordering Information......................................................................................104
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Datasheet
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 010
August 2005
5
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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GE28F640L18 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
GE28F640L18The function is Wireless Flash Memory. Intel CorporationIntel Corporation

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