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PDF IRFP360 Data sheet ( Hoja de datos )
| Número de pieza | IRFP360 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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 1. 400V, Power MOSFET - Vishay  Hay una vista previa y un enlace de descarga de IRFP360 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Data Sheet
IRFP360
July 1999 File Number 2290.3
23A, 400V, 0.200 Ohm, N-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17464.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP360
TO-247
IRFP360
NOTE: When ordering, use the entire part number.
Features
• 23A, 400V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
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Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
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4-341
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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IRFP360
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
10000
8000
1.05
6000
0.95
4000
CISS
COSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0.85
0.75
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2000
CRSS
0
12
5 10
2
5 102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
40
102
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30 TJ = 25oC
TJ = 150oC
20 www.DataShee10 t4U.comTJ=25oC
TJ = 150oC
10
0
0 10 20 30 40 50
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
1
0 0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 25A
16
VDS = 80V
12
VDS = 320V
8
4
0
0 25 50 75 100 125
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFP360.PDF ] | |
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