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PDF C1815 Data sheet ( Hoja de datos )
| Número de pieza | C1815 | |
| Descripción | Plastic Encapsulate Transistors | |
| Fabricantes | Jiangsu Changjiang Electronics Technology | |
| Logotipo |  |
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 1. NPN Transistor ( PDF )  Hay una vista previa y un enlace de descarga de C1815 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
C1815 TRANSISTOR (NPN)
FEATURES
Power dissipation
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
-60 V
-50 V
-5 V
150 mA
PD Total Device Dissipation
200 mW
TJ, Tstg Junction and Storage Temperature
-55-150
℃
*These ratings are limiting values above which the serviceability
of any semiconductor device may be impaired.
TO—92
1.EMITTER
2.COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN TYP MAX
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Noise Figure
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Cob
NF
Ic= 100 uA, IE=0
Ic= 0. 1 mA, IB=0
IE= 100 uA, IC=0
VCB= 60 V , IE=0
VCE= 50 V , IB=0
VEB= 5 V, IC=0
VCE= 6 V, IC= 2mA
IC= 100mA, IB= 10 mA
IC= 100 mA, IB= 10mA
VCE= 10 V, IC= 1mA
f=30MHz
VCB=10V,IE=0
f=1MHZ
VCE= 6 V, IC=0.1 mA
f =1KHz,RG=10K
60
50
5
70
80
0.1
0.1
0.1
700
0.25
1
3.5
10
UNIT
V
V
V
uA
uA
uA
V
V
MHz
pF
dB
CLASSIFICATION OF hFE(1)
Rank
O
wRawngwe.DataSheet4U.co7m0-140
Y
120-240
GR
200-400
BL
350-700
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet C1815.PDF ] | |
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