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What is HN29V2G74WT-30?

This electronic component, produced by the manufacturer "Renesas Technology", performs the same function as "AG-AND Flash Memory".


HN29V2G74WT-30 Datasheet PDF - Renesas Technology

Part Number HN29V2G74WT-30
Description AG-AND Flash Memory
Manufacturers Renesas Technology 
Logo Renesas Technology Logo 


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Total 70 Pages



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HN29V2G74WT-30
(128M × 8-bit) ×2 AG-AND Flash Memory
REJ03C0182-0200Z
Rev. 2.00
Jul.21.2004
Description
The HN29V2G74 is a 2G-bit AG-AND flash memory. It mounts two 1G-bit AG-AND flash memories
with multi-level memory cells, which are programmable and erasable automatically with a single 3.0 V
power supply. It achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous
multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist Gate-AND) type
Flash memory cell using multi level cell technology provides both the most cost effective solution and high
speed programming.
Features
On-board single power supply: VCC = 2.7 V to 3.6 V
Operation Temperature range: Ta = 0 to +70°C
Memory organization
Memory array: (2048+64) bytes × 16384 page × 4 Bank × 2
Page size: (2048+64) bytes × 2
Block size: (2048+64) bytes × 2 page × 2
Page Register: (2048+64) bytes × 4 Bank × 2
Multi level memory cell
2bit/cell
Automatic program
Page program
Multi bank program
Cache program
2 page cache program
Automatic Erase
Block Erase
Multi Bank Block Erase
Access time
Memory array to register (1st access time): 120 µs max
Serial access: 35 ns min
Rev.2.00, Jul.21.2004, page 1 of 91

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HN29V2G74WT-30 equivalent
HN29V2G74WT-30
Block Diagram
Left side chip
Page address buffer
16
Bank0
Bank Bank
12
Bank3
X-
decoder
Memory array
(2048+64)
x 16384 page
16
I/O1_1
to
I/O8_1
VCC1
VSS1
Multi-
plexer
8 Data
input
buffer
8
Data register
2048+64 byte
Y-Gating
Y-Decoder
Input data
control
8 12
Column address
counter
R/B1
CE1
RE1
WE1
WP1
CLE1
ALE1
PRE1
RES1
Control
signal
buffer
Read/Program/Erase
control
X-
decoder
Memory array
(2048+64)
x 16384 page
Data register
2048+64 byte
Y-Gating
Y-Decoder
Data
output buffer
Right side chip
Page address buffer
16
Bank0
Bank Bank
12
Bank3
X-
decoder
Memory array
(2048+64)
x 16384 page
16
I/O1_2
to
I/O8_2
VCC2
VSS2
Multi-
plexer
8 Data
input
buffer
8
Data register
2048+64 byte
Y-Gating
Y-Decoder
Input data
control
8 12
Column address
counter
R/B2
CE2
RE2
WE2
WP2
CLE2
ALE2
PRE2
RES2
Control
signal
buffer
Read/Program/Erase
control
X-
decoder
Memory array
(2048+64)
x 16384 page
Data register
2048+64 byte
Y-Gating
Y-Decoder
Data
output buffer
Rev.2.00, Jul. 21.2004, page 5 of 91


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HN29V2G74WT-30 electronic component.


Information Total 70 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
HN29V2G74WT-30The function is AG-AND Flash Memory. Renesas TechnologyRenesas Technology

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