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PDF 2SK3254 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3254 | |
| Descripción | N-Channel MOS Silicon FET | |
| Fabricantes | Sanyo Electric | |
| Logotipo |  |
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( DataSheet : www.DataSheet4U.com )
2SK3254
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
Features and Applications
• Low ON-state resistance.
• Low Qg.
TENTATIVE
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
* ):Chip Performance Shown
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
VDSS
VGSS
ID*
IDP
PD
Tch
Tstg
(TC=25°C)
500
±30
10
40
50
150
--55 to ±150
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
ID=1mA , VGS=0
VDS=500V , VGS=0
VGS=±30V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=5A
ID=5A , VGS=10V
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=200V , ID=5A
VGS=10V
See Specified Test
Circuit
IS=5A , VGS = 0
min
500
2.5
2.4
(Note) Be careful in handling the2SK3254 because it has no protection diode between gate and source.
unit
V
V
A
A
W
°C
°C
typ max
250
±100
3.5
6.3
0.8 1.0
880
140
48
30
17
35
100
38
1.5
Switching Time Test Circuit
Package Dimensions TO-3PML(unit:mm)
VDD=200V
φ 3.4
16.0
5.6
3.1
unit
V
µA
nA
V
S
Ω
pF
pF
pF
nC
ns
ns
ns
ns
V
PW=1µS
D.C.≤0.5%
VGS=10V
ID=5A
RL=40Ω
D VOUT
2.8 2.0
2.0
G
2SK3254
RGS
P.G 50Ω
S
1.0
123
0.6
1 : Gate
2 : Drain
3 : Source
Specifications and information herin are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
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