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What is C30665?

This electronic component, produced by the manufacturer "Perkin Elmer Optoelectronics", performs the same function as "(C306xx) PIN-TYPE PHOTODIODE".


C30665 Datasheet PDF - Perkin Elmer Optoelectronics

Part Number C30665
Description (C306xx) PIN-TYPE PHOTODIODE
Manufacturers Perkin Elmer Optoelectronics 
Logo Perkin Elmer Optoelectronics Logo 


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C30619, C30641, C30642, C30665
Figure 9. Package D15: TO-5 with Glass Window.
Ordering Guide
C30 # # # L - X X X
TE-Cooler Option:
Window Option:
Chip Type:
TC:
DTC:
1-stage TE cooler
2-stage TE cooler
(Not yet available for C30665)
E: Silicon
G: Glass
(See below for availability)
619: 0.5mm diameter
641: 1.0mm diameter
642: 2.0mm diameter
665: 3.0mm diameter
Device Package Availability
Window Window
Package Type
Option Type C30619 C30641 C30642 C30665
E Silicon D21 D21 - -
G Glass D14 D14 D15 D15
Note 1: Special Order
©2000 PerkinElmer, Inc.
All rights reserved.
07w0w0 w.DataSheet4U.com
www.DataSheet4U.com
For more information e-mail us at [email protected] or visit our web site at www.perkinelmer.com/opto
All values are nominal; specifications subject to change without notice.
is a registered trademark of PerkinElmer, Inc.
PerkinElmer Optoelectronics
22001 Dumberry Road,
wwwV.aDuadtraeSuihl,eQeuté4bUe.ccom
Canada J7V 8P7
Phone: (450) 424-3300
Fax: (450) 424-3411

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C30665 equivalent
Description
The PerkinElmer family of large-area InGaAs
PIN photodiodes provide high responsivity
from 800 nm to 1700 nm for applications
including optical power meters, fiber optic test
equipment, near-IR spectoscopy and
instrumentation. All devices are planar
passivated and feature low capacitance for
extended bandwidth, and high shunt
resistance for maximum sensitivity. Typical
devices feature <1% non-linearity to optical
powers >+13 dBm (20 mW), and uniformity
within ±2% across the detector active area.
Typical responsivity of 0.2 A/W at 850 nm for
our large-area InGaAs devices allows use of
a single detector in fiber optic test
instrumentation designed to operate at 850,
1300, and 1550 nm.
Large-Area InGaAs
Photodiodes
C30619, C30641, C30642, C30665
Features
Devices are available with active areas from
0.5 mm to 3.0 mm in TO-type packages or on
thermoelectric coolers for increased sensitivity
(see below). Photodiodes can also be
mounted on customized ceramic sub-mounts
to suit specific application requirements.
PerkinElmer Optoelectronics Canada is
qualified to ISO-9001 and operates to MIL-Q-
9858A and AQAP-1 quality standards. All
devices undergo extended life-test and
periodic process qualification programs to
assure high reliability. In addition, all
production devices are sourced from a
qualified wafer, screened with a 16 hour,
200°C burn-in at -10V bias (C30619 and
C30641) or -5V (C30642 and C30665), and
tested to meet responsivity, spectral noise,
capacitance, shunt resistance and dark
current specifications.
• 0.5, 1.0, 2.0, and 3.0 mm diameters
• High responsivity from 850 nm to 1550 nm
• High shunt resistance, low dark current
• TE-cooled package options
• Low capacitance for fast response times
Applications
• Power meters
• Fiber identifiers
• Laser burn-in racks
• Near infrared instrumentation
• F.T.I.R. spectroscopy
EVERYTHING
IN A
NEW
LIGHT.


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for C30665 electronic component.


Information Total 5 Pages
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