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What is JAN2N2919?

This electronic component, produced by the manufacturer "New England Semiconductor", performs the same function as "(JAN2N2919 / JAN2N2920) Transistor".


JAN2N2919 Datasheet PDF - New England Semiconductor

Part Number JAN2N2919
Description (JAN2N2919 / JAN2N2920) Transistor
Manufacturers New England Semiconductor 
Logo New England Semiconductor Logo 


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The documentation and process conversion
measures necessary to comply with this document
shall be completed by 3 October 2005.
INCH-POUND
MIL-PRF-19500/355K
3 July 2005
SUPERSEDING
MIL-PRF-19500/355J
8 July 2004
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,
TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN
silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500. Two levels of product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and
JANKCA die), figure 4 (JANHCB and JANKCB die).
* 1.3 Maximum ratings, unless otherwise specified, TC =+25°C.
PT (1)
TA = +25°C
PT (2)
TC = +25°C
IC
VCBO
VCEO
VEBO
One Both One Both
section sections section sections
TJ and TSTG
mW mW
mW
W mA V dc V dc V dc
°C
dc
300 600 750 1.25
70 60 6 -65 to +200
30
(1) For TA > +25°C, derate linearly 1.71 mW/°C, one section; 3.43 mW/°C, both sections.
(2) For TC > +25°C, derate linearly 4.286 mW/°C, one section; 7.14 mW/°C, both sections.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
[email protected]. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at http://assist.daps.dla.mil .
AMSC N/A
FSC 5961
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JAN2N2919 equivalent
MIL-PRF-19500/355K
NOTES:
1. Chip size................................................. .015 x .019 inch ±.001 inch (0.381 x 0.4826 mm ±0.0254 mm).
2. Chip thickness ........................................ .010 ±.0015 inch (0.254 ±0.0381 mm).
3. Top metal ............................................... Aluminum 15,000Å minimum, 18,000Å nominal.
4. Back metal.............................................. A. Gold 2,500Å minimum, 3,000Å nominal.
B. Eutectic Mount - No Gold.
5. Backside................................................. Collector.
6. Bonding pad ........................................... B = .003 inch (0.0762 mm), E = .004 inch (0.1016 mm) diameter.
7. Passivation ............................................. Si3N4 (Silicon Nitride) 2 kÅ min, 2.2 kÅ nom.
FIGURE 3. Physical dimensions (JANHCA and JANKCA die).
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for JAN2N2919 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
JAN2N2919The function is (JAN2N2919 / JAN2N2920) Transistor. New England SemiconductorNew England Semiconductor

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