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PDF H8050 Data sheet ( Hoja de datos )
| Número de pieza | H8050 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | Shantou Huashan Electronic Devices | |
| Logotipo |  |
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.comShantou Huashan Electronic Devices Co.,Ltd.
heet4U H8050█ NPN EPITAXIAL SILICON TRANSISTOR
taS2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS
aB PUSH-PULL OPERATION.
w.D█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
wwTstg——Storage Temperature………………………… -55~150℃
Tj——Juncttion Temperature…………………………………150℃
mPC——Collector Dissipation…………………………………1W
.coVCBO——Collector-Base Voltage………………………………40V
VCEO——Collector-Emitter Voltage……………………………25V
UVEBO——Emitter-Base Voltage………………………………6V
t4IC——Collector Current………………………………………1.5A
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
ee█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
hSymbol
SICBO
taIEBO
aHFE
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
.DVBE
VCE(sat）
wVBE(sat)
wBVCBO
wBVCEO
Base- Emitter Voltage
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Min Typ Max Unit
Test Conditions
0.1 μA VCB=35V, IE=0
0.1 μA VEB=6V, IC=0
85 500
VCE=1V, IC=100mA
40 VCE=1V, IC=800mA
1 V VCE=1V, IC=10mA
0.5 V IC=800mA, IB=80mA
1.2 V IC=800mA,IB=80mA
40 V IC=100μA，IE=0
25 V IC=2mA，IB=0
BVEBO
Cob
fT
Emitter- Base Breakdown Voltage
Output Capacacitance
Current Gain-Bandwidth Product
█ hFE Classification
B
85—160
C
120—200
6
9.0
100
D
160—300
mV
.copF
UMHz
IE=100μA，IC=0
VCB=10V,IE=0，f=1MHz
VCE=10V, IC=50mA
taSheet4E
www.Da270—500
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet H8050.PDF ] | |
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