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What is 2SC5926?

This electronic component, produced by the manufacturer "Panasonic Semiconductor", performs the same function as "Silicon NPN triple diffusion planar type".


2SC5926 Datasheet PDF - Panasonic Semiconductor

Part Number 2SC5926
Description Silicon NPN triple diffusion planar type
Manufacturers Panasonic Semiconductor 
Logo Panasonic Semiconductor Logo 


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Power Transistors
2SC5926
Silicon NPN triple diffusion planar type
For power amplification
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
Features
High forward current transfer ratio hFE which has satisfactory linearity.
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
80
60
6
3
6
15
2.0
150
55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
A
A
W
°C
°C
0.65±0.1
0.35±0.1
2.5±0.2
1.2±0.1
1.48±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
C 1.0
2.25±0.2
0.55±0.1
123
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1
Collector-emitter saturation voltage
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
IEBO
hFE1 *2
hFE2
VCE(sat)
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 80 V, IE = 0
VCE = 40 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 0.5 A
VCE = 4 V, IC = 3 A
IC = 1 A, IB = 20 mA
IC = 1 A, Resistance loaded
IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
60 V
100 µA
100 µA
100 µA
500 2 300
100
0.7 V
0.2 µs
1.5 µs
0.1 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
P
hFE1 500 to 1 500 1 300 to 2 300
Publication date: November 2004
SJD00326AED
1


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SC5926 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
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