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PDF K3467 Data sheet ( Hoja de datos )
| Número de pieza | K3467 | |
| Descripción | MOSFET ( Transistor ) - 2SK3467 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3467
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3467 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3467
TO-220AB
2SK3467-ZK
TO-263(MP-25ZK)
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low gate charge
QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C) PT1
Total Power Dissipation (TC = 25°C) PT2
20
±20
±80
±320
1.5
76
Channel Temperature
Storage Temperature
Tch 150
Tstg −55 to +150
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
V
V
A
A
W
W
°C
°C
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14991EJ1V0DS00 (1st edition)
Date Published March 2001 NS CP(K)
Printed in Japan
©
2001
1 page  
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2SK3467
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
RD(S@(onV) GLSim=it1e0dIDV()DC)
ID(pulse)
Power
100
Dissip1a0tmi3osmn1sLmim3s0i0teµds
PW = 10
µs
µs
TC = 25˚C
Single Pulse
1
0.1
1
DC
10
VDS - Drain to Source Voltage - V
100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
Rth(ch-A) = 83.3˚C/W
Rth(ch-C) = 1.65˚C/W
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - sec
Single Pulse
10 100 1000
Data Sheet D14991EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3467.PDF ] | |
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