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PDF 2SK3991 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3991 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3991
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3991 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3991
2SK3991-ZK
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
• Low on-state resistance
RDS(on)1 = 13.0 mΩ MAX. (VGS = 10 V, ID = 15 A)
• Low Ciss: Ciss = 830 pF TYP.
• 5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±30
±120
Total Power Dissipation (TC = 25°C)
PT1
21
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS 15
EAS 22.5
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17434EJ2V0DS00 (2nd edition)
Date Published February 2005 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
2005
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
ID = 15 A
Pulsed
40
30
VGS = 5.0 V
20
10 10 V
0
-75
-25 25
75 125
Tch - Channel Temperature - °C
175
SWITCHING CHARACTERISTICS
100
td(off)
tf
td(on)
10
tr
1
0.1
VDD = 12.5 V
VGS = 10 V
RG = 10 Ω
1 10
ID - Drain Current - A
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 10 V
0V
1
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK3991
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
100
Coss
Crss
VGS = 0 V
f = 1 MHz
10
0.01 0.1 1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
24 12
ID = 30 A
20 VDD = 20 V
12.5 V
16 5 V
10
8
12 6
VGS
84
4 VDS 2
00
0 5 10 15 20
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = 100 A/µs
VGS = 0
1
1 10 100
IF - Diode Forward Current - A
Data Sheet D17434EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3991.PDF ] | |
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