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What is G4BC20KD?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "IRG4BC20KD".


G4BC20KD Datasheet PDF - International Rectifier

Part Number G4BC20KD
Description IRG4BC20KD
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Short Circuit Rated UltraFast: Optimized for
C
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
G
E
n-channel
Industry standard TO-220AB package
Benefits
Latest generation 4 IGBTs offer highest power density
motor controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces the IRGBC20KD2 and IRGBC20MD2
products
For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
TO-220AB
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Max.
600
16
9.0
32
32
7.0
32
10
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.1
3.5
–––
80
–––
Units
°C/W
g (oz)
www.irf.com
1
4/24/2000

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G4BC20KD equivalent
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800
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
600
Cies
400
200
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.8
VCC = 480V
VGE = 15V
TJ = 25 ° C
IC = 9.0A
0.7
0.6
IRG4BC20KD
20
VCC = 400V
I C = 9.0A
16
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10 RG 5=0Ohm
VGE = 15V
VCC = 480V
IC = 18A
1 IC = 9.09AA
IC = 4.5A
0.5
0
10 20 30 40
RRGG ,, GGaattee RReessisistatanncece( (O)hm)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5


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Part NumberDescriptionMFRS
G4BC20KDThe function is IRG4BC20KD. International RectifierInternational Rectifier

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