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PDF UPA677TB Data sheet ( Hoja de datos )
| Número de pieza | UPA677TB | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA677TB
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA677TB is a switching device which can be driven
directly by a 2.5 V power source.
The µPA677TB features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A)
RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A)
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
• Two MOS FET circuits in same size package as SC-70
PACKAGE DRAWING (Unit: mm)
0.2
+0.1
-0
0.15
+0.1
-0.05
654
123
0.65 0.65
1.3
2.0 ±0.2
0 to 0.1
0.7
0.9 ±0.1
ORDERING INFORMATION
PART NUMBER
µPA677TB
Marking: WA
PACKAGE
SC-88 (SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS ±12 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation(2units) Note2
ID(DC)
ID(pulse)
PT
±0.35
±1.40
0.2
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 Board of 2500 mm2 x 1.1 mm 2units total.
PIN CONNECTUON (Top View)
654
1: Source 1
2: Gate 1
3: Drain 2
4: Source 2
5: Gate 2
6: Drain 1
123
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD = ±200 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16598EJ1V0DS00 (1st edition)
Date Published March 2003 NS CP(K)
Printed in Japan
2003
1 page  
1000
SWITCHING CHARACTERISTICS
VDD = 10 V
V GS = 4.0 V
RG = 10 Ω
100
10
0.01
td(off)
tf
tr
td(on)
0.1 1
ID - Drain Current - A
10
µPA677TB
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
VGS = 0 V
P ulsed
1
0.1
0.01
0.001
0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
1.4
Data Sheet G16598EJ1V0DS
5
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| Páginas | Total 6 Páginas | |
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