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SEMICONDUCTOR TECHNICAL DATA
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by MRF175GU/D
The RF MOSFET Line
RF Power
Field-Effect Transistors
N–Channel Enhancement–Mode
MRF175GU
MRF175GV
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
• Guaranteed Performance
MRF175GV @ 28 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
MRF175GU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 12 dB Typ
Efficiency — 55% Typ
• 100% Ruggedness Tested At Rated Output Power
D
• Low Thermal Resistance
• Low Crss — 20 pF Typ @ VDS = 28 V
G
G
S
(FLANGE)
200/150 WATTS, 28 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
(RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 375–04, STYLE 2
D
Symbol
VDSS
VDGR
Value
65
65
Unit
Vdc
Vdc
VGS ±40 Vdc
ID 26 Adc
PD 400 Watts
2.27 W/°C
Tstg –65 to +150
TJ 200
°C
°C
Symbol
RθJC
Max
0.44
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
V(BR)DSS
65
—
— Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IDSS — — 2.5 mAdc
IGSS — — 1.0 µAdc
(continued)
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
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TYPICAL CHARACTERISTICS
MRF175GV
300 320
280
240
IDQ = 2 x 100 mA
f = 225 MHz
Pin = 12 W
200 200
160 8 W
100
0
0
VDD = 28 V
IDQ = 2 x 100 mA
f = 225 MHz
12
Pin, POWER INPUT (WATTS)
Figure 8. Power Input versus Power Output
24
120 4 W
80
40
0
12 14 16
18 20
22 24 26 28
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
MRF175GU
200 200
180
Pin = 14 W
180
160 160
140 140
10 W
120 120
100 100
6W
80 80
60 60
40 40
20
f = 400 MHz
20
0 12 14 16 18 20 22 24 26 28
VDD, SUPPLY VOLTAGE (VOLTS)
00
f = 400 MHz
500 MHz
VDS = 28 V
IDQ = 2 x 100 mA
5 10 15 20
Pin, INPUT POWER (WATTS)
25
Figure 10. Output Power versus Supply Voltage
Figure 11. Output Power versus Input Power
REV 8
5
MRF175GV
30
25 Pout = 200 W
20
15
VDS = 28 V
10 IDQ = 2 x 100 mA
150 W
5
5 10 20
50 100 200
f, FREQUENCY (MHz)
Figure 12. Power Gain versus Frequency
500
R
K
E
H
PACKAGE DIMENSIONS
U
G
12
34
D
N
–A–
Q RADIUS 2 PL
0.25 (0.010) M T A M B M
–B–
5
J
–T–
SEATING
PLANE
C
CASE 375–04
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 1.330 1.350
B 0.370 0.410
C 0.190 0.230
D 0.215 0.235
E 0.050 0.070
G 0.430 0.440
H 0.102 0.112
J 0.004 0.006
K 0.185 0.215
N 0.845 0.875
Q 0.060 0.070
R 0.390 0.410
U 1.100 BSC
MILLIMETERS
MIN MAX
33.79 34.29
9.40 10.41
4.83 5.84
5.47 5.96
1.27 1.77
10.92 11.18
2.59 2.84
0.11 0.15
4.83 5.33
21.46 22.23
1.52 1.78
9.91 10.41
27.94 BSC
STYLE 2:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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