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PDF LB120A Data sheet ( Hoja de datos )
| Número de pieza | LB120A | |
| Descripción | TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR | |
| Fabricantes | ETC | |
| Logotipo |  |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
LB120A
TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
Description
Designed for use in high-voltage switching
applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
600
Collector-Emitter Voltage
VCEO
400
Emitter-Base Voltage
VEBO
6
Collector Current (DC)
IC 100
Collector Current (pulse)
IC 200
Base Current (DC)
IB 20
Base Current (pulse)
IB 40
Total Power Dissipation
Total Power Dissipation(TC=25oC)
PD
PD
0.8
7
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
mA
mA
mA
mA
W
W
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
2o Typ
2o Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 600
-
-
Collector-Emitter Breakdown Voltage
BVCEO 400
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICBO
ICEO
-
-
- 10
- 10
Emitter Cutoff Current
IEBO
-
- 10
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
VBE(sat)
-
-
-
- 0.4
- 0.75
-1
DC Current Gain(1)
hFE1
8
-
-
hFE2
10
-
36
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
µA
µA
V
V
V
-
-
Test Conditions
IC=100µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=550V, IE=0
VCE=400V, IB=0
VEB=6V, IC=0
IC=50mA, IB=10mA
IC=100mA, IB=20mA
IC=50mA, IB=10mA
IC=10mA, VCE=10V
IC=50mA, VCE=10V
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet LB120A.PDF ] | |
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