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Número de pieza | SPW17N80C2 | |
Descripción | Power Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPW17N80C2 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! Preliminary data
Cool MOS™ Power Transistor
Feature
· New revolutionary high voltage technology
· Worldwide best RDS(on) in TO 247
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· Ultra low effective capacitances
SPW17N80C2
COOLMOS
Power Semiconductors
Product Summary
VDS 800 V
WRDS(on) 290 m
ID 17 A
P-TO247
Type
SPW17N80C2
Package
P-TO247
Ordering Code
Q67040-S4359
Marking
SPW17N80C2
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=4A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=17A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
mReverse diode dv/dt
.coIS=17A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
t4uGate source voltage
ePower dissipation
heTC = 25 °C
tasOperating and storage temperature
www.da Page 1
ID puls
EAS
EAR
IAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
17
11
51
670
Unit
A
mJ
0.5
17 A
6 V/ns
±20 V
208 W
-55... +150 °C
2000-05-29
1 page Preliminary data
SPW17N80C2
1 Power dissipation
Ptot = f (TC)
SPW17N80C2
240
W
200
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2 SPW17N80C2
A
tp = 6.7µs
10 µs
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
SPW17N80C2
18
A
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 °C 160
TC
4 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPW17N80C2
K/W
10 0
10 1
10 -1
100 µs
10 -2
D = 0.50
0.20
10 0
1 ms
10 -3
0.10
0.05
10 ms
DC
10 -4
single pulse
0.02
0.01
10
-1
10
0
10 1
10 2 V 10 3
10
-5
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
VDS
tp
Page 5
2000-05-29
5 Page Preliminary data
SPW17N80C2
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 11
2000-05-29
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet SPW17N80C2.PDF ] |
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