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C2383 Datasheet PDF - Shanghai SIM-BCD Semiconductor

Part Number C2383
Description Silicon NPN Epitaxial Transistor
Manufacturers Shanghai SIM-BCD Semiconductor 
Logo Shanghai SIM-BCD Semiconductor Logo 

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C2383
C2383 Silicon NPN Epitaxial Transistor
Description :The C2383 is designed for color TV class B sound output applications
Features: High voltage: VCEO=160V
Complementary to A1013
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Size
Front Metal
Backside Metal
Scribe line width
Wafer Size
1100um×1100um
210±20um
Base 240um×240um
Emitter 330um×260um
Al
AuAs
60um
6 inch
Electrical Characteristics( Ta=25)
Characteristic
Symbol
Test Condition
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
ICBO
IEBO
BVCBO
BVCEO
BVEBO
hFE
VCB=150V, IE=0
VEB=5V, IC=0
IC=0.1mA
IC=10mA
IE=0.1mA
VCE=5V, IC=200mA
Collector Saturation Voltage
wwwMa.yd20a04tasheet4u.com
VCE(sat) IC=500mA, IB=50mA
Version :0.0
Min Max
1.0
1.0
160
160
5.0
60 320
1.5
Unit
uA
uA
V
V
V
V
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1. 160V, NPN Transistor - KSC2383

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