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PDF BU109 Data sheet ( Hoja de datos )
| Número de pieza | BU109 | |
| Descripción | NPN HIGH VOLTAGE SILICON POWER TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BU109 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN HIGH VOLTAGE SILICON POWER TRANSISTOR
IS/ISO 9002
Lic# QSC/L-000019.3
BU109
TO-3
Metal Can Package
HORIZONTAL DEFLECTION OUTPUT STAGE OF TVs and CRTs
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Emitter Voltage (VBE= -1.5V)
Collector Current
Collector Peak Current (Repetitive)
Collector Peak Current (t=10ms)
Base Current
Total Power Dissipation@ Tc<25ºC
Juntion Temperature
Storage Temperature
VCEO
VCBO
VEBO
VCEV
IC
ICM
ICM
IB
Ptot
Tj
Tstg
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
Rth(j-a)
Rth(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Turn off Time
ICES
ICES
ICES
IEBO
VCE(Sat) *
VBE(Sat) *
fT
toff
VCE=330V, VBE=0
VCE=200V, VBE=0
VCE=200V, VBE=0
TC=150ºC
VEB=6V, IC=0
IC=5A,IB=0.5A
IC=5A,IB=0.5A
IC=0.5A, VCE=10V
IC=5A, IB end = 0.5A
*Pulse Test: Pulse Duration=300ms, Duty Cycle =1.5%
Continental Device India Limited
Data Sheet
VALUE
150
330
6.0
330
7.0
10.0
15.0
4.0
60
150
-65 To+150
70
2.08
UNITS
V
V
V
V
A
A
A
A
W
ºC
ºC
ºC/W
ºC/W
MIN
MAX
UNITS
5.0 mA
100 µA
1.0 mA
1.0 mA
1.0 V
1.2 V
10 MHz
0.75 us
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BU109.PDF ] | |
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