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What is MX66C256?

This electronic component, produced by the manufacturer "Macronix International", performs the same function as "Very Low Power 32k x 8 CMOS SRAM".


MX66C256 Datasheet PDF - Macronix International

Part Number MX66C256
Description Very Low Power 32k x 8 CMOS SRAM
Manufacturers Macronix International 
Logo Macronix International Logo 


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MX66C256
Very Low Power 32k x 8 CMOS SRAM
FEATURES
Vcc operation voltage : 5.0V
Very low power consumption :
50 mA (Max.) write current
40 mA (Max.) read current
0.4uA (Typ.) CMOS standby current
High speed access time :
- 70 70ns (Max.)
- 100 100ns (Max.)
Input levels are CMOS-compatible
Automatic power down when chip is deselected
Three state outputs
Fully static operation
Data retention supply voltage as low as 2.0V
Easy expansion with CE and OE options
DESCRIPTION
The MX66C256 is a high performance, very low power
CMOS Static Random Access Memory organized as
32,768 words by 8 bits and operates at 5.0V supply
voltage.
Advanced CMOS technology and circuit techniques
provide both high speed and low power features with a
typical CMOS standby current of 0.4uA and maximum
access time of 70ns and 100 ns in 5V operation.
Easy memory expansion is provided by an active LOW
chip enable(CE), and active LOW output enable (OE)
and three-state output drivers.
The MX66C256 has an automatic power down feature,
reducing the power consumption significantly when chip
is deselected.
The MX66C256 is available in the JEDEC standard 28
pin 330mil Plastic SOP, and 8mmx13.4mm TSOP
(normal type).
PIN CONFIGURATIONS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 28-SOP 21
9 20
10 19
11 18
12 17
13 16
14 15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28-TSOP
28 A10
27 CE
26 DQ7
25 DQ6
24 DQ5
23 DQ4
22 DQ3
21 GND
20 DQ2
19 DQ1
18 DQ0
17 A0
16 A1
15 A2
BLOCK DIAGRAM
A5
A6
A7
A12
A14
A13
A8
A9
A11
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE
WE
OE
Vdd
Gnd
Address
Input
18
Row
Buffer
Decoder
512
Memory Array
512 x 512
8
8
Control
Data
Input
Buffer
Data
Output
Buffer
512
8 Column I/O
Write Driver
Sense Amp
8
64
Column Decoder
12
Address Input Buffer
A4 A3 A2 A1 A0 A10
P/N DS0035
1
Macronix America Inc. USA 1338 Ridder Park Dr., San Jose, CA 95131
Tel (408)453-8088 Fax (408)451-0876 www.macronix.com
Rev. 1.1, Jan., 2000

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MX66C256 equivalent
READ CYCLE2 (1,3,4)
CE
D OUT
t ACS
(5)
t CLZ
MX66C256
(5)
t CHZ
READ CYCLE3 (1,4)
ADDRESS
OE
CE
D OUT
t RC
t AA
t OE
t OLZ
t ACS
(5)
t CLZ
t OH
t (5)
OHZ
t (1,5)
CHZ
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE = VIL .
3. Address valid prior to or coincident with CE transition low .
4. OE = VIL .
5. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
P/N DS0035
5
Macronix America Inc. USA 1338 Ridder Park Dr., San Jose, CA 95131
Tel (408)453-8088 Fax (408)451-0876 www.macronix.com
Rev. 1.1, Jan., 2000


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MX66C256 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
MX66C256The function is Very Low Power 32k x 8 CMOS SRAM. Macronix InternationalMacronix International

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