STW20NM60 Datasheet PDF - ST Microelectronics
Part Number | STW20NM60 | |
Description | N-CHANNEL Power MOSFET | |
Manufacturers | ST Microelectronics | |
Logo | ||
There is a preview and STW20NM60 download ( pdf file ) link at the bottom of this page. Total 18 Pages |
Preview 1 page No Preview Available ! STB20NM60-1 - STP20NM60FP
STB20NM60 - STP20NM60 - STW20NM60
N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK
MDmesh™ Power MOSFET
Features
Type
STP20NM60
STP20NM60FP
STB20NM60
STB20NM60-1
STW20NM60
VDSS
600V
600V
600V
600V
600V
RDS(on)
< 0.29Ω
< 0.29Ω
< 0.29Ω
< 0.29Ω
< 0.29Ω
ID
20A
20A
20A
20A
20A
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
The MDmesh™ is a new revolutionary Power
MOSFET technology that associates the multiple
drain process with the company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Table 1. Device summary
Part number
STP20NM60
STP20NM60FP
STB20NM60T4
STB20NM60-1
STW20NM60
Marking
P20NM60
P20NM60FP
B20NM60
B20NM60-1
W20NM60
3
1
D²PAK
3
2
1
TO-220
3
2
1
TO-220FP
TO-247
123
I²PAK
Figure 1. Internal schematic diagram
Package
TO-220
TO-220FP
D²PAK
I²PAK
TO-247
Packaging
Tube
Tube
Tape & reel
Tube
Tube
August 2007
Rev 12
1/18
www.st.com
18
|
|
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 10 A
RG = 4.7Ω VGS = 10 V
(see Figure 15)
Min. Typ. Max. Unit
25 ns
20 ns
42 ns
11 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 20 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =20A, di/dt=100A/µs,
VDD = 60 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =20A, di/dt=100A/µs,
Tj = 150°C, VDD = 60 V
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
390
5
25
510
6.5
26
Max Unit
20 A
80 A
1.5 V
ns
µC
A
ns
µC
A
5/18
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STW20NM60 electronic component. |
Information | Total 18 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Product Image and Detail view | 1. - W20NM60, 600V, N-Ch, MOSFET [ Learn More ] | |
Download | [ STW20NM60.PDF Datasheet ] |
Share Link :
Electronic Components Distributor
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
Part Number | Description | MFRS |
STW20NM60 | The function is N-CHANNEL Power MOSFET. ST Microelectronics | |
STW20NM60FD | The function is N-CHANNEL Power MOSFET. ST Microelectronics | |
Semiconductors commonly used in industry:
1N4148 |  
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
STW2
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA |