IXBD4410 Datasheet PDF ( Pinout ) - (IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset

IXBD4410 Datasheet PDF - IXYS Corporation

Part Number	*IXBD4410*
Description	(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset
Manufacturers	IXYS Corporation
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ISOSMARTTM Half Bridge Driver Chipset

Type

IXBD4410PI

IXBD4411PI

IXBD4410SI

IXBD4411SI

Description

Package

Temperature Range

Full-Feature Low-Side Driver 16-Pin P-DIP -40 to +85°C

Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85°C

Full-Feature Low-Side Driver 16-Pin SO

Full-Feature High-Side Driver 16-Pin SO

-40 to +85°C

IXBD4410

IXBD4411

The IXBD4410/IXBD4411 ISOSMART

chipset is designed to control the gates

of two Power MOSFETs or Power

IGBTs that are connected in a half-

bridge (phase-leg) configuration for

driving multiple-phase motors, or used

in applications that require half-bridge

power circuits. The IXBD4410/

IXBD4411 is a full-feature chipset

consisting of two 16-Pin DIP or SO

devices interfaced and isolated by two

small-signal ferrite pulse transformers.

The small-signal transformers provide

greater than 1200 V isolation.

Even with commutating noise ambients

greater than ±50 V/ns and up to 1200 V

potentials, this chipset establishes

error-free two-way communications

between the system ground-reference

IXBD4410 and the inverter output-

reference IXBD4411. They incorporate

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to protect the IGBT or Power MOSFET

devices from damage.

The chipset provides the necessary

gate drive signals to fully control the

grounded-source low-side power

device as well as the floating-source

high-side power device. Additionally,

the IXBD4410/4411 chipset provides a

negative-going, off-state gate drive

signal for improved turn-off of IGBTs or

Power MOSFETs and a system logic-

compatible status fault output FLT to

indicate overcurrent or desaturation,

and undervoltage VDD or VEE. During a

status fault, both chipset keep their

respective gate drive outputs off; at

VEE.

540 V-

Features

z 1200 V or greater low-to-high side

isolation.

z Drives Power Systems Operating on

up to 575 V AC mains

z dv/dt immunity of greater than

±50V/ns

z Proprietary low-to-high side level

translation and communication

z On-chip negative gate-drive supply

to ensure Power MOSFET or IGBT

turn-off and to prevent gate noise

interference

z 5 V logic compatible HCMOS inputs

with hysteresis

z Available in either the 16-Pin DIP or

the 16-Pin wide-body, small-outline

plastic package

z 20 ns switching time with 1000 pF

load; 100 ns switching time with

10,000 pF load

z 100 ns propagation delay time

z 2 A peak output drive capability

z Self shut-down of output in response

to over-current or short-circuit

z Under-voltage and over-voltage VDD

lockout protection

z Protection from cross conduction of

the half bridge

z Logic compatible fault indication

from both low and high-side driver

Applications

z 1- or 3-Phase Motor Controls

z Switch Mode Power Supplies

(SMPS)

z Uninterruptible Power Supplies

(UPS)

z Induction Heating and Welding

Systems

z Switching Amplifiers

z General Power Conversion Circuits

IXYS reserves the right to change limits, test conditions and dimensions.

the IXBD4411 is strictly for status only.

Any gate-drive shutdown because of a

high-side fault is done locally within the

high-side IXBD4411. The IXBD4411

gate-drive will turn-off the power device

whenever an overcurrent or under

voltage condition arises. The overcurrent

sensing is active only while the gate

driver output is "high" (on). The

overcurrent fault condition is latched and

is reset on the next INH gate input

positive transition. The FLT (pin 8) of the

IXBD4411 is not used and should be

grounded.

The low-side IXBD4410 driver provides

an output pin 8 (FLT) to indicate a high-

side (IXBD4411) or a low-side

(IXBD4410) fault. This output pin is an

"open-drain" output. The IXBD4410 low-

side driver fault indications are similar to

the IXBD4411 high-side driver indications

as outlined above. A "graphic" logic

diagram of the chipset's FLT function is

presented in Fig.4. Note that this diagram

presents the logic of this function at the

"low-side" IXBD4410 driver and is not the

actual circuit. It describes the combined

logic of the "fault logic" and "hi-side fault

sense" blocks in both the IXBD4410 and

IXBD4411 as shown in Fig. 2 and 3.

The most efficient method of providing

power for the high-side driver is by

bootstrapping. This method is illustrated

in the functional drawing on page 4 and

in the application example (Fig. 6 and 9)

by diode D1 and capacitor C1. Using this

method, the power is drawn through a

high-voltage diode onto a reservoir

capacitor whenever the floating high-side

ground returns to near the real ground of

the low-side driver. When the high-side

gate is turned on and the floating ground

moves towards a higher potential, the

bootstrapping diode back-biases, and the

high-side driver draws its power solely

from the reservoir capacitor. Power may

also be provided via any isolated power

supply (usually an extra secondary on

the system housekeeping supply

switching transformer).

Both the IXBD4410 and IXBD4411

contain on-board negative charge pumps

to provide negative gate drive, which

ensures turn-off of the high- or low-side

power device in the presence of currents

induced by power device Miller capaci-

tance or from inductive ground transients.

These charge pumps provide -5 V

relative to the local driver ground when

IXBD4410

IXBD4411

VDD is at +15 V, and at rated average

currents of 25 mA. The charge pump

requires two external capacitors, C7 and

C11 in Fig. 6. The charge pump

frequency is nominally 600 kHz. The

charge pump clock is turned off

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IC.

Both the IXBD4410 and IXBD4411

drivers possess two local grounds each,

a common logic ground, and "Kelvin"

ground. The Kelvin ground and logic

grounds are first connected directly to

each other, and then to the Kelvin-source

of the power device for accurate over-

current measurement in the presence of

inductive transients on the power device

source terminal.

Power MOSFET or IGBT overcurrent

sensing utilizes an on-chip comparator

with a typical 300 mV threshold. In a

typical application, the current mirror pin

of the Power MOSFET or IGBT is con-

nected to a grounded, low-value resistor,

and to the overcurrent comparator input

on the high- or low-side driver. The

comparator will respond typically within

150 ns to an overcurrent condition to

shutdown the driver output. The power

switches could be protected also by

desa-turation detection (see Fig. 6, 7 and

9).

To assure maximum protection for the

phase-leg power devices, the chipset

incorporates the following Power

MOSFET and IGBT protection circuits:

z Power device overcurrent or desa-

turation protection. The IXBD4410/

4411will turn off the driven device

within 150 ns of sensing an output

overcurrent or desaturation condition.

z Gate-drive lockout circuitry to prevent

cross conduction (simultaneous

conduction of the low- and high-side

phase-leg power devices), either

under normal operating conditions or

when a fault occurs.

z During power-up, the chipset's gate-

drive outputs will be low (off), until the

voltage reaches the under-voltage trip

point.

z Under-voltage gate-drive lockout on

the low- and/or high- side driver when-

ever the respective positive power

supply falls below 9.5 V typically.

z Under-voltage gate-drive lockout on

the low- and high- side driver

whenever the respective negative

power supply rises above -3 V

typically.

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IXBD4410 Datasheet PDF - IXYS Corporation

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