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What is 200GB60DLC?

This electronic component, produced by the manufacturer "Eupec", performs the same function as "BSM200GB60DLC".


200GB60DLC Datasheet PDF - Eupec

Part Number 200GB60DLC
Description BSM200GB60DLC
Manufacturers Eupec 
Logo Eupec Logo 


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Total 8 Pages



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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 200 GB 60 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Tc= 50°C
Tc= 25°C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP= 1ms, Tc= 50°C
Gesamt-Verlustleistung
total power dissipation
Tc= 25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP= 1ms
Grenzlastintegral der Diode
I2t - value, Diode
VR= 0V, tp= 10ms, Tvj= 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
600
200
230
400
730
+/- 20V
200
400
4.050
2,5
V
A
A
A
W
V
A
A
A2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC= 200A, VGE= 15V, Tvj= 25°C
IC= 200A, VGE= 15V, Tvj= 125°C
Gate-Schwellenspannung
gate threshold voltage
IC= 4,0mA, VCE= VGE, Tvj= 25°C
Eingangskapazität
input capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
VCE= 600V, VGE= 0V, Tvj= 25°C
VCE= 600V, VGE= 0V, Tvj= 125°C
VCE= 0V, VGE= 20V, Tvj= 25°C
VCE sat
min.
-
-
typ.
1,95
2,20
max.
2,45
-
VGE(th)
4,5
5,5
6,5
V
V
V
Cies - 9 - nF
Cres - 0,8 - nF
- 1 500 µA
ICES
- 1 - mA
IGES
-
- 400 nA
prepared by: Andreas Vetter
approved by: Michael Hornkamp
date of publication: 2000-04-26
revision: 1
1 (8)
BSM 200 GB 60 DLC
2000-02-08

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200GB60DLC equivalent
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 200 GB 60 DLC
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
400
350
300
Tvj = 25°C
Tvj = 125°C
250
200
150
100
50
0
56789
VGE [V]
I C= f (VGE)
VCE= 20V
10 11 12
13
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
400
350
300
Tvj = 25°C
Tvj = 125°C
250
200
150
100
50
0
0,0 0,2 0,4 0,6 0,8 1,0
VF [V]
I F= f (VF)
1,2 1,4 1,6
5 (8)
BSM 200 GB 60 DLC
2000-02-08


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 200GB60DLC electronic component.


Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
200GB60DLCThe function is BSM200GB60DLC. EupecEupec

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