Datasheet STS3DPFS30 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	STS3DPFS30	P - CHANNEL MOSFET PLUS SCHOTTKY RECTIFIER ® STS3DPFS30 ™ STripFET P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS 30V SCHOTTKY IF(AV) 3A R DS(on) 0.09 Ω V RRM 30V ID 3A V F(MAX) 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage St	ST Microelectronics	rectifier
2	STS3DPFS30L	P - CHANNEL MOSFET PLUS SCHOTTKY RECTIFIER ® STS3DPFS30L ™ STripFET MOSFET V DSS 30V SCHOTTKY IF(AV) 3A P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER PRELIMINARY DATA R DS(on) <0.16 Ω V RRM 30V ID 3A V F(MAX) 0.51V MAIN PRODUCT CHARACTERISTICS DESCRIPTION: This product associates the latest low voltage StripFET	ST Microelectronics	rectifier

STS Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	STS-2308-01	DYNAMIC MICRO SPEAKER Messrs : SPECIFICATION ITEM : DYNAMIC MICRO SPEAKER CUSTOMER’S MODEL : MODEL NUMBER : SIZE : STS-2308-01 Ø23 5.0T DATE OF APPROVAL 2007. 03.09 星音電子 STAR ACOUSTICS CO. SEOJIN BLDG. 887-10, SHINCHUN-DONG, SHIHEUNG-SI, KYUNG GI-DO.KOREA. TEL : (031)404-4203 FAX : (031)318-8692 E-MA	STAR ACOUSTICS	data
2	STS-8857	Transmissive Switch Assembly STS-8857 Transmissive Switch Assembly Features • Non contact switching • Three wires for electrical connection • Fast switching speed Description The STS-8857 consists of an infrared emitting diode and an NPN silicon phototransistor mounted on opposite sides of a 3.8 mm wi	Silonex	data
3	STS01DTP06	Dual NPN-PNP complementary Bipolar transistor STS01DTP06 Dual NPN-PNP complementary Bipolar transistor General features VCE(sat) 0.35V ■ ■ ■ ■ hFE >100 IC 1A High gain Low VCE(sat) Simplified circuit design Reduced component count SO-8 Applications ■ ■ ■ Push-Pull or Totem-Pole configuration MOSFET and IG	ST Microelectronics	transistor
4	STS05DTP03	Dual NPN-PNP complementary bipolar transistor STS05DTP03 www.datasheet4u.com Dual NPN-PNP complementary bipolar transistor Features ■ ■ ■ ■ High gain Low VCE(sat) Simplified circuit design Reduced component count 4 1 5 8 Applications ■ ■ ■ Push-pull or Totem-Pole configuration MOSFET and IGBT gate driving Motor, relay and sol	ST Microelectronics	transistor
5	STS100	Multifunction Telecommunications Switch STS100 Multifunction Telecommunications Switch DESCRIPTION The STS100 combines two 1 Form A solid state relays and one optocoupler in a 16-pin SOIC package. Its small outline and low height make it ideal for use in PCMCIA applications where multi-function devices help reduce co	Solid State Optronic	data
6	STS10DN3LH5	Power MOSFETs STS10DN3LH5 Dual N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™ V Power MOSFET Features Type STS10DN3LH5 ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max 0.021 Ω ID 10 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High ava	ST Microelectronics	mosfet
7	STS10NF30L	N-CHANNEL PowerMESH MOSFET ® STS10NF30L N - CHANNEL 30V - 0.011Ω - 10A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS10NF30L s s V DSS 30 V R DS( on) < 0.0135 Ω ID 10 A s TYPICAL RDS(on) = 0.011 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSF	ST Microelectronics	mosfet

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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