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PDF 2SK3561 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3561 | |
| Descripción | Silicon N Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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2SK3561
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3561
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
500
±30
8
32
40
312
8
4
150
-55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
1 2009-09-29
1 page  
2SK3561
rth – tw
10
1 Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
10μ
100μ
PDM
t
SINGLE PULSE
T
Duty = t/T
Rth (ch-c) = 3.125°C/W
1ｍ
10ｍ
100ｍ
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (PULSED) *
100 μs *
10 ID max (CONTINUOUS) *
1 ms *
1 DC OPERATION
Tc = 25°C
※ SINGLE NONREPETITIVE PULSE
0.1 Tc=25℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.01
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
500
400
300
200
100
0
25 50
75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 8.3mH
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-09-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3561.PDF ] | |
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