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Número de pieza | MPSH10 | |
Descripción | NPN RF Transistor | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MPSH10 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Discrete POWER & Signal
Technologies
MPSH10
MMBTH10
C
C
EB
TO-92
SOT-23
Mark: 3E
E
B
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100 µA to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
25
VCBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
3.0
IC Collector Current - Continuous
50
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
MPSH10
350
2.8
125
357
*MMBTH10
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation
1 page Common Emitter Y Parameters vs. Frequency
NPN RF Transistor
(continued)
Input Admittance
24
VCE = 10V
20 I C = 2 mA
g ie
16
12
b ie
8
4
0
100 200
500 1000
f - FREQUENCY (MHz)
Forward Transfer Admittance
60
40 g fe
VCE = 10V
I C = 2 mA
20
0
-20
-40
-60
100
b fe
200 500
f - FREQUENCY (MHz)
P 42 (EMITTER)
1000
Output Admittance
6
VCE = 10V
5 I C = 2 mA
4
b oe
3
2
1
0
100
200 500
f - FREQUENCY (MHz)
P 42 (EMITTER)
g oe
1000
Reverse Transfer Admittance
1.2
VCE = 10V
1 I C = 2 mA
0.8
-b re
0.6
0.4
0.2 -g re
0
100
200 500
f - FREQUENCY (MHz)
1000
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MPSH10.PDF ] |
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