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PDF UPA800TF Data sheet ( Hoja de datos )
| Número de pieza | UPA800TF | |
| Descripción | NPN SILICON HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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NPN SILICON HIGH UPA800TF
FREQUENCY TRANSISTOR
FEATURES
OUTLINE DIMENSIONS (Units in mm)
• SMALL PACKAGE STYLE:
SOT-363 package measures just 2.0 mm x 1.25 mm
• LOW HEIGHT PROFILE:
Just 0.60 mm high
• EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
DESCRIPTION
The UPA800TF contains two NE680 NPN high frequency
silicon bipolar chips. NEC's new low profile TF package is ideal
for all portable wireless applicatons where reducing compo-
nent height is a prime consideration. Each transistor chip is
independently mounted and easily configured for two stage
cascade LNAs and other similar applications.
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
20
VCEO Collector to Emitter Voltage V
10
VEBO Emitter to Base Voltage
V
1.5
IC Collector Current
mA 35
PT Total Power Dissipation
1 Die
2 Die
mW
mW
110
200
TJ Junction Temperature °C 150
TSTG Storage Temperature
°C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
PACKAGE OUTLINE TS06
(Top View)
2.1 ± 0.1
1.25 ± 0.1
0.65
2.0 ± 0.2
1.3
1
2
3
6
+0.10
0.22 - 0.05
(All
Leads)
5
4
0.6 ± 0.1
0.45
PIN OUT
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
0 ~ 0.1
0.13 ±0.05
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
ICBO
IEBO
hFE
fT
Cre
|S21E|2
NF
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain1 at VCE = 3 V, IC = 5 mA
Gain Bandwidth at VCE = 3 V, IC = 5 mA
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz
UNITS
µA
µA
GHz
pF
dB
dB
MIN
80
5.5
5.5
UPA800TF
TS06
TYP
120
8.0
0.3
7.5
1.9
MAX
1.0
1.0
200
0.7
3.2
Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use
part number UPA800TF-T1, 3K per reel.
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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