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What is K3296?

This electronic component, produced by the manufacturer "NEC", performs the same function as "MOSFET ( Transistor ) - 2SK3296".


K3296 Datasheet PDF - NEC

Part Number K3296
Description MOSFET ( Transistor ) - 2SK3296
Manufacturers NEC 
Logo NEC Logo 


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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3296
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3296 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
RDS(on)1 = 12 mMAX. (VGS = 10 V, ID = 18 A)
Low gate charge
QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
Built-in gate protection diode
Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3296
TO-220AB
2SK3296-S
2SK3296-ZK
2SK3296-ZJ
TO-262
TO-263(MP-25ZK)
TO-263(MP-25ZJ)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C) PT1
Total Power Dissipation (TC = 25°C) PT2
20
±20
±35
±140
1.5
40
Channel Temperature
Storage Temperature
Tch 150
Tstg 55 to +150
Note PW 10 µs, Duty Cycle 1%
V
V
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14063EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark  shows major revised points.
©
1999, 2000

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K3296 equivalent
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2SK3296
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
 FORWARD BIAS SAFE OPERATING AREA
1000
100
10
RD(S@(onV) LGiSm=ite1IdD0V(D)C)
ID(pulse)
100
300 s
PW =
s
10µs
Power Dissipa1ti0om3nmsL1smimsited
TC = 25°C
1 Single Pulse
0.1
1
DC
10
VDS - Drain to Source Voltage - V
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
Rth(ch-A) = 83.3˚C/W
Rth(ch-C) = 3.13˚C/W
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - sec
Single Pulse
10 100 1000
Data Sheet D14063EJ2V0DS
5


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K3296 datasheet


1. N-Ch Power MOSFET - NEC

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