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PDF SPW17N80C3 Data sheet ( Hoja de datos )
| Número de pieza | SPW17N80C3 | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPW17N80C3 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
SPW17N80C3
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
800 V
0.29 Ω
88 nC
PG-TO247-3
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Type
SPW17N80C3
Package
PG-TO247-3
Marking
17N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=3.4 A, V DD=50 V
I D=17 A, V DD=50 V
V DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M2.5 screws
Value
17
11
51
670
0.5
17
50
±20
±30
227
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 2.92
page 1
2014-04-29
Please note the new package dimensions according to PCN 2009-134-A
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=150 °C; t p=10 µs
parameter: V GS
35
30
25
20
5.5 V
15
5V
10
4.5 V
5
SPW17N80C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
1.4
20 V
1.3
10 V
1.2
6V
1.1
1 10 V
0.9
0.8
4 V4.5 V 5 V
0.7
5.5 V
6.5 V
6V
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=11 A; V GS=10 V
20
0.8
0.6
0.6
25 0 10 20 30 40
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs
parameter: T j
60
25 °C
50
50
40
0.4
98 %
typ
0.2
30
20
10
150 °C
0
-60 -20 20
60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 2.92
page 5
2014-04-29
Please note the new package dimensions according to PCN 2009-134-A
5 Page 
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1 New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1 Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.4, 2014-04-29
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet SPW17N80C3.PDF ] | |
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