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PDF 2SK3570 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3570 | |
| Descripción | Switching N-Channel Power MOS FET | |
| Fabricantes | NEC Electronics | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3570
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3570 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
•4.5V drive available.
•Low on-state resistance,
RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A)
•Low gate charge
QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
•Built-in gate protection diode
•Surface mount device available
5 ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3570
TO-220AB
2SK3570-S
TO-262
2SK3570-ZK
2SK3570-Z
TO-263
Note
TO-220SMD
Note TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
20
±20
±48
±160
1.5
29
150
−55 to +150
V
V
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16256EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP (K)
Printed in Japan
The mark ! shows major revised points.
©
2002
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
15 VGS = 4.5 V
10 10 V
5
0
-50
ID = 24 A
P ulsed
0 50 100
Tch - Channel Temperature - °C
150
100
SWITCHING CHARACTERISTICS
t d (o ff)
tf
td(on)
10
tr
1
0 .1
VDD = 10 V
VGS = 10 V
RG = 10 Ω
1 10
ID - Drain Current - A
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
P u lse d
100
10 VGS = 10 V
0V
1
0 .1
0 .0 1
0
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK3570
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
100
C iss
C oss
C rss
VGS = 0 V
f = 1 MHz
10
0 .0 1
0 .1
1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20 10
VDD = 16 V
16 10 V
8
12 6
8
VGS
4
42
VDS
ID = 48 A
00
0 5 10 15 20 25
QG - Gate Change - nC
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0 .1
d i/d t = 1 0 0 A /µs
VGS = 0 V
1 10
ID - Drain Current - A
100
Data Sheet D16256EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3570.PDF ] | |
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