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PDF MRF652 Data sheet ( Hoja de datos )
| Número de pieza | MRF652 | |
| Descripción | RF POWER TRANSISTORS NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MRF652 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistors
Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
• Guaranteed 12.5 Volt, 512 MHz Characteristics
Output Power = 5.0 Watts
Minimum Gain = 10 dB
Efficiency = 65% (Typ)
• Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB
• Series Equivalent Large–Signal Characterization
• Gold Metallized, Emitter Ballasted for Long Life and Reliability
• Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
16
36
4.0
2.0
25
143
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
Symbol
RθJC
Max
7.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
ICES
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
hFE
Min
16
36
36
4.0
—
10
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
Order this document
by MRF652/D
MRF652
MRF652S
5.0 W, 512 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 244–04, STYLE 1
MRF652
CASE 249–06, STYLE 1
MRF652S
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— — Vdc
— 1.0 mAdc
— 150 —
(continued)
MRF652 MRF652S
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MRF652.PDF ] | |
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