|
|
PDF MRF6522-70R3 Data sheet ( Hoja de datos )
| Número de pieza | MRF6522-70R3 | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MRF6522-70R3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF6522 - 70/D
The RF MOSFET Line
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for GSM 900 frequency band, the high gain and broadband
performance of this device make it ideal for large - signal, common source
amplifier applications in 26 volt base station equipment.
• Specified Performance @ Full GSM Band, 921 - 960 MHz, 26 Volts
Output Power, P1dB — 80 Watts (Typ)
Power Gain @ P1dB — 16 dB (Typ)
Efficiency @ P1dB — 58% (Typ)
• Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF6522−70R3
921 - 960 MHz, 70 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465D - 05, STYLE 1
NI - 600
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
65
± 20
7
159
0.9
- 65 to +150
200
Value
1.1
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF6522 - 70R3
1
1 page  
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
80
70 Pout
60
50
h
40
30
20
VDS = 26 Vdc
10 IDQ = 400 mA
f = 960 MHz
0
0 0.5 1.0 1.5
Pin, INPUT POWER (WATTS)
Figure 8. Efficiency and Output Power
versus Input Power
80
70
60
50
40
30
20
10
0
2.0
20 70
19 60
18
Gps
17
50
40
16
15 h VDS = 26 Vdc
f = 921 MHz
14
13
0.02 0.03 0.06 0.12 0.21 0.38 0.70 1.26 2.26 3.96
Pin, INPUT POWER (WATTS)
Figure 9. Power Gain and Efficiency
versus Input Power
30
20
10
0
20 70
19 60
18
17 Gps
50
40
16
15 h VDS = 26 Vdc
f = 960 MHz
14
13
0.02 0.03 0.05 0.10 0.18 0.34 0.62 1.15 2.14 3.70
Pin, INPUT POWER (WATTS)
Figure 10. Power Gain and Efficiency
versus Input Power
30
20
10
0
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF6522 - 70R3
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF6522-70R3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRF6522-70R3 | RF Power Field Effect Transistor | Motorola Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |