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PDF MRF653 Data sheet ( Hoja de datos )
| Número de pieza | MRF653 | |
| Descripción | RF POWER TRANSISTOR NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
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Hay una vista previa y un enlace de descarga de MRF653 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF653/D
The RF Line
NPN Silicon
RF Power Transistor
MRF653
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
• Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 10 W
Gain = 8.0 dB (Typ)
Efficiency = 65% (Typ)
• Gold Metallized, Emitter Ballasted for Long Life and Reliability
• Capable of 20:1 VSWR Load Mismatch at 16 V Supply Voltage
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
10 W, 512 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
16.5
38
4.0
2.75
44
0.25
Vdc
Vdc
Vdc
Adc
Watts
W/°C
CASE 244–04, STYLE 1
Storage Temperature Range
Operating Junction Temperature
Tstg – 65 to +150
TJ 200
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0)
V(BR)CES
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0)
ICES
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 10 W, f = 512 MHz)
Gpe
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 10 W, f = 512 MHz)
ηc
Load Mismatch Stress
(VCC = 16 Vdc, f = 512 MHz, Pin (1) = 2.6 W,
VSWR = 20:1, All Phase Angles)
ψ
4.0 °C/W
Min Typ Max Unit
16.5 —
38 —
4.0 —
——
— Vdc
— Vdc
— Vdc
5.0 mAdc
20 — 120 —
— 22 28 pF
7.0 8.0 — dB
55 65 — %
No Degradation in Output Power
NOTE:
1. Pin = 2.0 dB over the typical input power required for 10 W output power @ 12.5 Vdc.
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF653
1
1 page  
PACKAGE DIMENSIONS
2
31D
4K
M
T AJ
FP
8–32 NC 2A
WRENCH FLAT
SEATING PLANE
U
S
C
E
B
CASE 244–04
ISSUE J
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 7.06 7.26 0.278 0.286
B 6.20 6.50 0.244 0.256
C 14.99 16.51 0.590 0.650
D 5.46 5.96 0.215 0.235
E 1.40 1.65 0.055 0.065
G 1.52 ––– 0.060 –––
J 0.08 0.17 0.003 0.007
K 11.05 ––– 0.435 –––
M 45_NOM
45_NOM
P ––– 1.27 ––– 0.050
S 3.00 3.25 0.118 0.128
T 1.40 1.77 0.055 0.070
U 2.92 3.68 0.115 0.145
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
MOTOROLA RF DEVICE DATA
MRF653
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MRF653.PDF ] | |
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