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PDF IRFP460 Data sheet ( Hoja de datos )
| Número de pieza | IRFP460 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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 1. - N-Ch, 500V, MOSFET (TO-247)  Hay una vista previa y un enlace de descarga de IRFP460 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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® IRFP460
N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
IRFP460
500 V < 0.27 Ω 20 A
s TYPICAL RDS(on) = 0.22 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM (•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
500
500
± 20
20
13
80
250
2
3.5
-65 to 150
150
( 1) ISD ≤20 Α, di/dt ≤ 160 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
September 1998
1/8
1 page  
Normalized Gate Threshold Voltage vs
IRFP460
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP460.PDF ] | |
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