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PDF IRFP460 Data sheet ( Hoja de datos )
| Número de pieza | IRFP460 | |
| Descripción | 500V, 20A, N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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 1. - N-Ch, 500V, MOSFET (TO-247)  Hay una vista previa y un enlace de descarga de IRFP460 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Data Sheet
IRFP460
July 1999 File Number 2291.3
20A, 500V, 0.270 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17465.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP460
TO-247
IRFP460
NOTE: When ordering, use the entire part number.
Features
• 20A, 500V
• rDS(ON) = 0.270Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
4-359
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRFP460
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10000
8000
6000
4000
CISS
COSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
2000
CRSS
0
12
5 10
2
5 102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
32 VDS ≥ 50V
TJ = 25oC
24
16
TJ = 150oC
8
0
0 8 16 24 32 40
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
102
PULSE DURATION = 80µs
5 DUTY CYCLE = 0.5% MAX
2
10
5 TJ = 150oC
2
1
5
TJ = 25oC
2
0.1
0
0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 21A
16
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
0 0 40 80 120 160 200
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-363
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFP460.PDF ] | |
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