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PDF SUD50N06-09L Data sheet ( Hoja de datos )
| Número de pieza | SUD50N06-09L | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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SUD50N06-09L
Vishay Siliconix
N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level
PRODUCT SUMMARY
VDS (V)
60
RDS(on) ()
0.0093 at VGS = 10 V
0.0122 at VGS = 4.5 V
TO-252
ID (A)a
50
50
FEATURES
• 175 °C Junction Temperature
• TrenchFET® Power MOSFET
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD50N06-09L-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 100 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAS
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
± 20
50
50a
100
50a
50
125
136
3b, 8.3b, c
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t 10 s.
t 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
°C/W
Document Number: 72004
For technical questions, contact: [email protected]
www.vishay.com
S13-0298-Rev. F, 11-Feb-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
THERMAL RATINGS
60
50
40
30
20
10
SUD50N06-09L
Vishay Siliconix
1000
100
Limited by
RDS(on)*
10
1
0.1 TC = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms
100 ms
DC
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature (°C)
Maximum Drain Current vs. Ambient Temperature
2
1
Duty Cycle = 0.5
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
100
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72004.
Document Number: 72004
For technical questions, contact: [email protected]
www.vishay.com
S13-0298-Rev. F, 11-Feb-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SUD50N06-09L.PDF ] | |
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